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Researcher profile

Vojtěch Čalkovský

Vojtěch Čalkovský contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phastro-ph.IMcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Correlative Raman Imaging and Scanning Electron Microscopy: the Role of Single Ga Islands in Surface-Enhanced Raman Spectroscopy of Graphene

Surface enhanced Raman spectroscopy (SERS) is a perspective non-destructive analytic technique enabling detection of individual nanoobjects, even single-molecules. . In the paper, we have studied the morphology of Ga islands deposited on CVD graphene by ultrahigh vacuum (UHV) evaporation and local optical response of this system by the correlative Raman Imaging and Scanning Electron Microscopy (RISE). Contrary to the previous papers, where only an integral Raman response from the whole ununiformed Ga NPs ensembles on graphene was investigated, the RISE technique has enabled us to detect graphene Raman peaks enhanced by single Ga islands and particularly to correlate the Raman signal with the shape and size of these single particles. In this way and by a support of numerical simulations, we have proved a plasmonic nature of the Raman signal enhancement related to localized surface plasmon resonances (LSPR). It has been found that this enhancement is island-size dependent and shows a maximum for medium-sized Ga islands. A reasonable agreement between the simulations of the plasmon enhancement of electric fields in the vicinity of Ga islands and the experimental intensities of corresponding Raman peaks proved the plasmonic origin of the observed effect known as the Surface Enhanced Raman Spectroscopy.

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preprint2022arXiv

Geant4 simulation of the residual background in the ATHENA Wide Field Imager from protons deflected by the Charged Particle Diverter

X-ray telescopes opened up a new window into the high-energy universe. However, the last generation of these telescopes encountered an unexpected problem: their optics focused not only X-rays but low-energy (so called soft) protons as well. These protons are very hard to model and can not be distinguished from X-rays. For example, 40\% of XMM-Newton observations is significantly contaminated by soft proton induced background flares. In order to minimize the background from such low-energy protons the Advanced Telescope for High ENergy Astrophysics (ATHENA) satellite introduced a novel concept, the so called Charged Particle Diverter (CPD). It is an array of magnets in a Hallbach design, which deflects protons below 76 keV before they would hit the Wide Field Imager (WFI) detector. In this work, we investigate the effect of scattering of the deflected protons with the CPD walls and the inner surfaces of the WFI detector assembly. Such scattered protons can loose energy, change direction and still hit the WFI. In order to adopt the most realistic instrument model, we imported the CAD model of both the CPD and the WFI focal plane assembly. Soft protons corresponding to $\approx$2.5 hours of exposure to the L1 solar wind are simulated in this work. The inhomogeneous magnetic field of the CPD is included in the simulation. We present a preliminary estimate of the WFI residual background induced by soft proton secondary scattering, in the case of the optical blocking filter present in the field of view. A first investigation of the volumes responsible for scattering the protons back into the field of view is reported.

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preprint2022arXiv

Low temperature 2D GaN growth on Si (111) 7x7 assisted by hypethermal nitrogen ions

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7x7 surface using post-nitridation of Ga droplets by hyperthermal (E < 50 eV) nitrogen ions at low substrate temperatures (T < 220°C). Both deposition of Ga droplets and their post-nitridation is carried out using a special atom-ion beam source developed in our group. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in high purity GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a correct elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis showed unique characteristics of the fabricated GaN nanostructures.

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