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Researcher profile

Vivekanand Shukla

Vivekanand Shukla contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Stability of and conduction in single-walled Si$_2$BN nanotubes

We explore the possibility and potential benefit of rolling a Si2BN sheet into single-walled nanotubes (NTs). Using density functional theory (DFT), we consider both structural stability and the impact on the nature of chemical bonding and conduction. The structure is similar to carbon NTs and hexagonal boron-nitride (hBN) NTs and we consider both armchair and zigzag Si2BN configurations with varying diameters. The stability of these Si$_2$BN NTs is confirmed by first-principles molecular dynamics calculations, by an exothermal formation, an absence of imaginary modes in the phonon spectra. Also, we find the nature of conduction varies semiconducting, from semi-metallic to metallic, reflecting differences in armchair/zigzag-type structures, curvature effects, and the effect of quantum confinement. We present the detailed characterization of how these properties lead to differences in both the bonding nature and electronic structures

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preprint2022arXiv

vdW-DF-ahcx: a range-separated van der Waals density functional hybrid

Hybrid density functionals replace a fraction of an underlying generalized-gradient approximation (GGA) exchange description with a Fock-exchange component. Range-separated hybrids (RSHs) also effectively screen the Fock-exchange component and thus open the door for characterizations of metals and adsorption at metal surfaces. The RSHs are traditionally based on a robust GGA, such as PBE [PRL $\textbf{77}$, 3865 (1996)], for example, as implemented in the HSE design [JPC $\textbf{118}$, 8207 (2003)]. Here we define a RSH extension to the van der Waals density functional (vdW-DF) method [ROPP $\textbf{78}$, 066501 (2015)], launching vdW-DF-ahcx. We use an analytical-hole (AH) framework [JCP $\textbf{128}$, 194105 (2008)] to characterize the GGA-type exchange in the vdW-DF-cx version [PRB $\textbf{89}$, 075148 (2014)], isolate the short-ranged exchange component, and define the new RSH. We find that the performance vdW-DF-ahcx compares favorably to (dispersion-corrected) HSE for descriptions of bulk (broad molecular) properties. We also find that it provides accurate descriptions of noble-metal surface properties, including CO adsorption.

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preprint2020arXiv

Optical excitations and thermoelectric properties of 2D holey graphene

Recently, holey graphene (HG) has successfully synthesized at atomic precision of hole size and shape. This shows interesting physical and chemical properties for energy and environmental applications. Shaping of the pores also transforms semimetallic graphene to semiconductor holey graphene, which opens new door for its use in electronic applications. We systematically investigated the structural, electronic, optical and thermoelectric properties of HG structure using first-principles calculations. HG was found to have a direct band gap with 0.65 eV (PBE functional), 0.95 eV (HSE06 functional) and HSE06 functional is in good agreement with experimental results. For the optical properties, we use single-shot G0W0 calculations by solving the Bethe-Salpeter equation to determining the intralayer excitonic effects. From the absorption spectrum, we obtained the optical gap of 1.28 eV and a week excitonic binding energy of 80 meV. We have found the large values of thermopower of 1662.59 $μ$V/K and better electronic figure of merit, ZT$_{e}$ as 1.13 from the investigated thermoelectric properties. Our investigations exhibit strong and broad optical absorption in the visible light region, which makes HG monolayer a promising candidate for optoelectronic and thermoelectric applications.

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