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Researcher profile

Vincent Lemaur

Vincent Lemaur contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2022arXiv

Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells

The active layer crystallinity has long been associated with favourable organic solar cells (OSCs) properties such as high mobility and Fill Factor. In particular, this applies to acceptor materials such as fullerene-derivatives and the most recent Non-Fullerene Acceptors (NFAs), which are now surpassing 19% of Power Conversion Efficiency. Despite these advantages are being commonly attributed to their 3-dimensional crystal packing motif in the single crystal, the bridge that links the acceptor crystal packing from single crystals to solar cells has not clearly been shown yet. In this work, we investigate the molecular organisation of seven NFAs (o-IDTBR, IDIC, ITIC, m-ITIC, 4TIC, 4TICO, m-4TICO), following the evolution of their packing motif in single-crystals, powder and thin films made with pure NFAs and donor:NFA blends. In general, we observed a good correlation between the NFA single crystal packing and their molecular arrangement in the bulk heterojunction. However, the NFA packing motif is not directly affecting the device parameters but it provide an impact on the material propensity to form highly crystalline domain in the blend. Although that NFA crystallinity is required to obtain high mobility, the domain purity is more important to limit the bimolecular recombination and to obtain high efficiency organic solar cells.

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preprint2021arXiv

Structural and dynamic disorder, not ionic trapping, controls charge transport in highly doped conducting polymers

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.

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preprint2021arXiv

Thermal conductivity of benzothieno-benzothiophene derivatives at the nanoscale

We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 +/- 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 +/- 0.13 W m-1 K-1). These results are supported by molecular dynamics calculations (Approach to Equilibrium Molecular Dynamics method) performed on the corresponding molecular crystals. The calculations point to significant thermal conductivity (3D-like) values along the 3 crystalline directions, with anisotropy factors between the crystalline directions below 1.8 for BTBT and below 2.8 for C8-BTBT-C8, in deep contrast with the charge transport properties featuring a two-dimensional character for these materials. In agreement with the experiments, the calculations yield larger values in BTBT compared to C8-BTBT-C8 (0.6-1.3 W m-1 K-1 versus 0.3-0.7 W m-1 K-1, respectively). The weak thickness dependence of the nanoscale thermal resistance is in agreement with a simple analytical model.

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