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Vinayak B Kamble

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications

Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using XRD, SEM and Raman spectroscopy which reveals that the films on glass are phase pure oriented SnSe while those on Alumina are polycrystalline SnSe with SnSe2 impurity phase. The optical properties of the films grown onto glass substrate were studied by UV-vis spectroscopy. The optical band gap calculated is 1 to 1.3 eV for indirect and direct transition in film deposited on glass substrates. The Arrhenius plots of the two films show very different thermal activations i.e. 0.088 eV for tin vacancy acceptor level close to valance band maxima in pure SnSe and 0.44 eV for mid gap selenium vacancies of SnSe2. Photoresponse was observed by illuminating the sample (Glass and alumina Substrate) using white and UV light (400 nm) for a fixed time pulses. The deposited onto Alumina substrate were found to show better photoresponse due to SnSe/SnSe2 p-n heterojunctions.

preprint2021arXiv

Protonic Conduction Induced Selective Room Temperature Hydrogen Response in ZnO/NiO Heterojunction Surfaces

In this paper we show that the ionic conduction through surface chemisorbed ambient moisture leads to the remarkably high room temperature selective response towards hydrogen gas. The surface adsorbed moisture acts as surface states and shows ionic conduction, as a result of smaller size of ZnO nanoparticles of 20 +/- 5 nm. This response is enhanced remarkably i.e. from 10% to 190% for 1200 ppm H2 gas when p-type NiO quasi-nanowires (width ~50 nm) are mixed with these n-type ZnO nanoparticles to form a homogenous NiO/ZnO nano-bulk p-n heterostructure. The maximum response is obtained for about 50-50 % composition of NiO/ZnO although it is of still n-type character. The dominant carrier type reversal from n to p type takes place at rather high NiO content of about 60-80% in ZnO, depicting dominating contribution of ZnO into the response. The parallel surface ionic current through chemisorbed moisture (surface states) has been identified as a primary factor for high sensitivity at room temperature. Thus, the presence of heterojunction barrier at the NiO-ZnO interface assisted with the surface ionic conductivity due to adsorbed moisture results in large, selective response to hydrogen at room temperature.