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Vei Wang

Vei Wang contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Modulation of Nearly Free Electron States in Hydroxyl-Functionalized MXenes: A First-Principles Study

The transition metal carbides (namely MXenes) and their functionalized derivatives exhibit various physical and chemical characteristics and offer many potential applications in electronic devices and sensors. Using density functional theory (DFT), it is revealed that the nearly free electron (NFE) states are near the Fermi levels in hydroxyl (OH) functionalized MXenes. Most of the OH-terminated MXene are metallic, but some of them, e.g. Sc2C(OH)2, are semiconductors and the NFE states are conduction bands. In this paper, to investigate the NFE states in MXenes, an attractive image-potential well model is adopted. Compared the solutions of this model with the DFT calculations, it is found that due to the overlap of spatially extensive wave functions of NFE states and their hybridization between the artificial neighboring layers imposed by the periodical boundary conditions (PBCs), the DFT results represent the properties of multiple layers, intrinsically. Based on the DFT calculations, it is found that the energy gap widths are affected by the interlayer distances. We address that the energetics of the NFE states can be modulated by the external electric fields and it is possible to convert semiconducting MXenes into metals. This band-gap manipulation makes the OH-terminated semiconducting MXenes an excellent candidate for electronic switch applications. Finally, using a set of electron transport calculations, I-V characteristics of Sc2C(OH)2 devices are investigated with the gate voltages.

preprint2020arXiv

Orbital-Energy Splitting in Anion Ordered Ruddlesden-Popper Halide Perovskites for Tunable Optoelectronic Applications

The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations and taking anion ordered Ruddlesden-Popper (RP) phase halide perovskites Cs$_{n+1}$Ge$_n$I$_{n+1}$Cl$_{2n}$ as an example, we demonstrate how to rationally optimize the optoelectronic properties (e.g., band gap, transition dipole matrix elements, carrier effective masses, band width) through a simple band structure parameter. Our results show that reducing the splitting energy $|Δc|$ of p orbitals of B-site atom can effectively reduce the band gap and carrier effective masses while greatly improving the optical absorption in the visible region. Thereby, the orbital-property relationship with $Δc$ is well established through biaxial compressive strain. Finally, it is shown that this approach can be reasonably extended to several other non-cubic halide perovskites with similar p orbitals characteristics at the conduction band edges. Therefore, we believe that our proposed orbital engineering approach provides atomic-level guidance for understanding and optimizing the device performance of layered perovskite solar cells.

preprint2014arXiv

Electron spin-orbit interaction in helically coiled carbon nanotube

Recent theoretical and experimental works on carbon nanotubes (CNTs) have revealed that spin-orbit interaction (SOI) is more robust than it was thought. Motivated by this, we investigate the SOI in helically coiled CNTs. Calculations are performed within the tight-binding model with the inclusion of a four-orbital basis set; thereby the full symmetry of the helical lattice and the hybridization of $π$\ and $σ$ bands are considered. By virtue of unitary transformation and perturbation approach, we obtain the analytic solution for the torsion-dependent SOI in helically coiled CNTs. Due to the enhancement of curvature and torsion, the calculated SOI values reach the order of meV which has been confirmed by \textit{ab initio} electronic structure calculation.