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Valery Borovikov

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cond-mat.mtrl-sci

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preprint2015arXiv

Effect of Stacking Fault Energy on Mechanism of Plastic Deformation in Nanotwinned FCC Metals

Starting from a semi-empirical potential designed for Cu, we developed a series of potentials that provide essentially constant values of all significant (calculated) materials properties except for the intrinsic stacking fault energy, which varies over a range that encompasses the lowest and highest values observed in nature. These potentials were employed in molecular dynamics (MD) simulations to investigate how stacking fault energy affects the mechanical behavior of nanotwinned face-centered cubic (fcc) materials. The results indicate that properties such as yield strength and microstructural stability do not vary systematically with stacking fault energy, but rather fall into two distinct regimes corresponding to low and high stacking fault energies.

preprint2014arXiv

Reflection and implantation of low energy helium with tungsten surfaces

Reflection and implantation of low energy helium (He) ions by tungsten (W) substrate are studied using molecular dynamics (MD) simulations. Motivated by the ITER divertor design, our study considers a range of W substrate temperatures (300 K, 1000 K, 1500 K), a range of He atom incidence energies ($\le$100 eV) and a range of angles of incidence ($0^{\circ}$-$75^{\circ}$) with respect to substrate normal. The MD simulations quantify the reflection and implantation function, the integrated moments such as the particle/energy reflection coefficients and average implantation depths. Distributions of implantation depths, reflected energy, polar and azimuthal angles of reflection are obtained, as functions of simulation parameters, such as W substrate temperature, polar angle of incidence, the energy of incident He, and the type of W substrate surface. Comparison between the MD simulation results, the results obtained using SRIM simulation package, and the existing experimental and theoretical results is provided.

preprint2009arXiv

Step-edge instability during epitaxial growth of graphene from SiC(0001)

The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard because SiC is itself a useful semiconductor and, by suitable manipulation of the growth conditions, epitaxial films can be produced that exhibit all the transport properties of ideal, two-dimensional graphene desired for device applications. Nevertheless, there is little or no understanding of the actual kinetics of growth, which is likely to be required for future process control. As a step in this direction, we propose a local heat release mechanism to explain finger-like structures observed when graphene is grown by step flow decomposition of SiC(0001). Using a continuum equation of motion for the shape evolution of a moving step, a linear stability analysis predicts whether a shape perturbation of a straight moving step grows or decays as a function of growth temperature, the background pressure of Si maintained during growth, and the effectiveness of an inert buffer gas to retard the escape of Si atoms from the crystal surface. The theory gives semi-quantitative agreement with experiment for the characteristic separation between fingers observed when graphene is grown in a low-pressure induction furnace or under ultrahigh vacuum conditions.