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Valentin N. Popov

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Published work

7 published item(s)

preprint2020arXiv

Theoretical evidence of a significant modification of the electronic structure of double-walled carbon nanotubes due to the interlayer interaction

The recently reported experimental optical spectra of double-walled carbon nanotubes exhibit more peaks than it could be expected based on the layers alone. The appearance of excess peaks has been attributed to the interlayer interaction. In order to elucidate the origin of the excess peaks, we perform calculations of the optical absorption of a particular nanotube using the recursion method with non-orthogonal tight-binding basis functions. Our study shows that the interlayer interaction can give rise to major changes in the electronic structure of this nanotube, manifesting themselves with shifts of the optical transitions and appearance of new optical transitions. The derived absorption spectrum is found to be in excellent agreement with the available experimental data, which justifies the use of the proposed approach for double-walled carbon nanotubes.

preprint2016arXiv

Comparative study of the two-phonon Raman bands of silicene and graphene

We present a computational study of the two-phonon Raman spectra of silicene and graphene within a density-functional non-orthogonal tight-binding model. Due to the presence of linear bands close to the Fermi energy in the electronic structure of both structures, the Raman scattering by phonons is resonant. We find that the Raman spectra exhibit a crossover behavior for laser excitation close to the π-plasmon energy. This phenomenon is explained by the disappearance of certain paths for resonant Raman scattering and the appearance of other paths beyond this energy. Besides that, the electronic joint density of states is divergent at this energy, which is reflected on the behavior of the Raman bands of the two structures in a qualitatively different way. Additionally, a number of Raman bands, originating from divergent phonon density of states at the M point and at points, inside the Brillouin zone, is also predicted. The calculated spectra for graphene are in excellent agreement with available experimental data. The obtained Raman bands can be used for structural characterization of silicene and graphene samples by Raman spectroscopy.

preprint2015arXiv

Two-phonon Raman bands of bilayer graphene: revisited

We present complete calculations of the two-phonon Raman bands of bilayer graphene, including all overtone and combination modes, within a density-functional tight-binding model. Based on our results, we assign unambiguously the observed two-phonon Raman bands to two-phonon modes, thus resolving the existing controversies. In particular, we show that both overtone and combination modes have essential contribution to the 2D band, bringing about specific modifications of the band shape. We argue that a mid-range two-phonon Raman band, previously assigned to the 2ZO mode, should be assigned to the TOZO' mode. We find that the Raman band, usually assigned to the LOLA mode, has significant contribution from the TOZO mode. The predicted Raman bands can be used for assignment of the observed ones in the Raman spectra of bilayer graphene for the needs of sample characterization for future technological applications.

preprint2014arXiv

Low-frequency phonons of few-layer graphene within a tight-binding model

Few-layer graphene is a layered carbon material with covalent bonding in the layers and weak van der Waals interactions between the layers. The interlayer energy is more than two orders of magnitude smaller than the intralayer one, which hinders the description of the static and dynamic properties within parameter-free electron band structure models. We overcome this difficulty by introducing two sets of matrix elements - one set for the covalent bonds in the graphene layers and another one for the van der Waals interactions between adjacent graphene layers in a tight-binding model of the band structure. Both sets of matrix elements are derived from an ab-initio study on carbon dimers. The matrix elements are then applied in the calculation of the phonon dispersion of graphite and few-layer graphene with AB and ABC layer stacking. The results for AB stacking agree well with the available experimental data, which justifies the application of the matrix elements to other layered carbon structures with van der Waals interactions such as few-layer graphene nanoribbons, multiwall carbon nanotubes, and carbon onions.

preprint2013arXiv

Theoretical 2D Raman band of strained graphene

We study the 2D Raman band of in-plane uniaxially strained graphene within a non-orthogonal tight-binding model. At non-zero strain, the obtained 2D band splits into two subbands at strain angles $0^{\circ}$ and $30^{\circ}$ or into three subbands at intermediate angles. The evolution of the 2D subbands is calculated systematically in the range of the accessible strains from -1% to 3% and for the commonly used laser photon energy from 1.5 eV to 3.0 eV. The strain rate and dispersion rate of the 2D subbands are derived and tabulated. In particular, these two quantities show large variations up to 50%. The results on the 2D subbands can be used for detecting and monitoring strain in graphene for nanoelectronics applications.

preprint2013arXiv

Theoretical Raman fingerprints of $α$-, $β$-, and $γ$-graphyne

The novel graphene allotropes $α$-, $β$-, and $γ$-graphyne derive from graphene by insertion of acetylenic groups. The three graphynes are the only members of the graphyne family with the same hexagonal symmetry as graphene itself, which has as a consequence similarity in their electronic and vibrational properties. Here, we study the electronic band structure, phonon dispersion, and Raman spectra of these graphynes within an \textit{ab-initio}-based non-orthogonal tight-binding model. In particular, the predicted Raman spectra exhibit a few intense resonant Raman lines, which can be used for identification of the three graphynes by their Raman spectra for future applications in nanoelectronics.

preprint2012arXiv

Theoretical polarization dependence of the two-phonon double-resonant Raman spectra of graphene

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra within a single model. Here, we present results for the two-phonon Raman spectra of graphene calculated by means of the quantum perturbation theory. The electron and phonon dispersions, electronic lifetime, electron-photon and electron-phonon matrix elements, are all obtained within a density-functional-theory-based non-orthogonal tight-binding model. We study systematically the overtone and combination two-phonon Raman bands, and, in particular, the energy and polarization dependence of their Raman shift and intensity. We find that the ratio of the integrated intensities for parallel and cross polarized light for all two-phonon bands is between 0.33 and 0.42. Our results are in good agreement with the available experimental data.