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Researcher profile

V. Wang

V. Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2020arXiv

Moiré potential, lattice corrugation, and band gap spatial variation in a twist-free MoS2/MoTe2 heterobilayer

To have a fully ab initio description of the Moiré pattern in a transition metal dichalcogenide heterobilayer, we have carried out density functional theory calculations, taking accounts of both atomic registry in and the lattice corrugation out of the monolayers, on a MoTe2(9*9)/MoS2(10*10) system which has a moderate size of superlattice larger than an exciton yet not large enough to justify a continuum model treatment. We find that the local potential in the midplane of the bilayer displays a conspicuous Moiré pattern. It further leads us to reveal that the variation of the average local potential near Mo atoms in both MoTe2 and MoS2 layers make intralayer Moiré potentials. They are the result of mutual modulation and correlate directly with the spatial variation of the valence band maximum and conduction band minimum. The interlayer Moiré potential, defined as the difference between the two intralayer Moiré potentials, has a depth of 0.11 eV and changes roughly in proportion to the band gap variation in the Moiré cell, which has an amplitude of 0.04 eV. We find the lattice corrugation is significant in both MoTe2 (0.30Å) and MoS2 (0.77Å) layers, yet its effect on the electronic properties is marginal. The wrinkling of the MoTe2/MoS2 bilayer enhances the spatial variation of the local band gap by 5 meV, while its influence on the global band gap is within 1 meV. A simple intralayer band-coupling model is proposed to understand the correlation of Moiré potential and spatial variation of the band gap.

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preprint2016arXiv

Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene

Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% along zigzag direction. A semi-empirical interlayer coupling model is proposed, which can well reproduce the evolution of valence band-edges obtained by first-principles calculations. We conclude that the interlayer coupling plays a dominated role in the evolution of the band-edges via decreasing both band gap and carrier effective masses with the increase of phosphorene thickness. A scrutiny of the orbital-decomposed band structure provides a better understanding of the upward shift of valence band maximum surpassing that of conduction band minimum.

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preprint2015arXiv

Native point defects in few-layer phosphorene

Using hybrid density functional theory combined with a semiempirical van der Waals dispersion correction, we have investigated the structural and electronic properties of vacancies and self-interstitials in defective few-layer phosphorene. We find that both a vacancy and a self-interstitial defect are more stable in the outer layer than in the inner layer. The formation energy and transition energy of both a vacancy and a self-interstitial P defect decrease with increasing film thickness, mainly due to the upward shift of the host valence band maximum in reference to the vacuum level. Consequently, both vacancies and self-interstitials could act as shallow acceptors, and this well explains the experimentally observed p-type conductivity in few-layer phosphorene. On the other hand, since these native point defects have moderate formation energies and are stable in negatively charged states, they could also serve as electron compensating centers in n-type few-layer phosphorene.

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preprint2014arXiv

Sources of n-type conductivity in GaInO3

Using hybrid density functional theory, we investigated formation energies and transition energies of possible donor-like defects in GaInO3, with the aim of exploring the sources of the experimentally observed n-type conductivity in this material. We predicted that O vacancies are deep donors; interstitial Ga and In are shallow donors but with rather high formation energies (>2.5 eV). Thus these intrinsic defects cannot cause high levels of n-type conductivity. However, ubiquitous H impurities existing in samples can act as shallow donors. As for extrinsic dopants, substitutional Sn and Ge are shown to act as effective donor dopants and can give rise to highly n-type conductive GaInO3; while substitutional N behaviors as a compensating center. Our results provide a consistent explanation of experimental observations.

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preprint2013arXiv

Hybrid functional with semi-empirical van der Waals study of native defects in hexagonal BN

The formation energies and transition energy levels of native defects in hexagonal BN have been studied by first-principles calculations based on hybrid density functional theory (DFT) together with an empirical dispersion correction of Grimme's DFT-D2 method. Our calculated results predict that the interstitial B is the most stable defect under N-rich and p-type conditions. While the B vacancy and interstitial N become the dominate defects when the electron chemical potential is near the conduction band maximum of host. Nevertheless, these compensating defects would be inactive due to their ultra deep ionization levels under both p- and n-type conditions.

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preprint2013arXiv

Roles of oxygen vacancies on ferromagnetism in Ni doped In2O3: A hybrid functional study

The roles of oxygen vacancies on the electronic and magnetic properties of Ni doped In$_2$O$_3$ have been studied by first-principles calculations based on hybrid functional theory. Our results predict that the Ni-doped In$_2$O$_3$ system displays a ferromagnetic semiconducting character. However, the presence of oxygen vacancies results in antiferromagnetic coupling between the neighboring Ni pair bridged by an oxygen vacancy. The antiferromagnetic coupling is found to arise from the predominant role of superexchange due to the strong Ni 3d-O 2p hybridization. Consequently, the oxygen vacancies play a key role in the lower saturation magnetization of Ni:In$_2$O$_3$ polycrystalline sample, as observed in experiments.

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