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V. Skoromets

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2016arXiv

Broad-band dielectric response of BTZ-BCT piezoceramics: soft and central mode behaviour

Dielectric properties of BTZ-BCT ceramics were probed in the frequency range from 10 Hz to 100 THz in a broad temperature range (10-900 K). Polar soft phonon observed in infrared spectra softens with cooling, however below 500 K its frequency becomes temperature independent. Simultaneously, a central mode activates in terahertz and microwave spectra; and it actually drives the ferroelectric phase transitions. Consequently, the phase transition strongly resemble a crossover between the dispacive and order-disorder type. The central mode vanishes below 200 K. The dielectric relaxation in the radiofrequency and microwave range anomalously broadens on cooling below T $_{C1}$ resulting in the nearly frequency independent dielectric loss bleow 200 K. This broadening comes from a broad frequency distribution of ferroelectric domain wall vibrations. Raman spectra reveal new phonons below 400 K, i.e. already 15 K above T $_{C1}$ . Several weak modes are detected in the paraelectric phase up to 500 K in the Raman spectra. Activation of these modes is ascribed to the presence of polar nanoclusters in the material.

preprint2015arXiv

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate doping, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.

preprint2014arXiv

Strong spin-phonon coupling in infrared and Raman spectra of SrMnO3

Infrared reflectivity spectra of cubic SrMnO $_{3}$ ceramics reveal 18 % stiffening of the lowest-frequency phonon below the antiferromagnetic phase transition occurring at T $_{N}$ = 233 K. Such a large temperature change of the polar phonon frequency is extraordinary and we attribute it to an exceptionally strong spin-phonon coupling in this material. This is consistent with our prediction from first principles calculations. Moreover, polar phonons become Raman active below T $_{N}$ , although their activation is forbidden by symmetry in $Pm\bar{3}m$ space group. This gives evidence that the cubic $Pm\bar{3}m$ symmetry is locally broken below T $_{N}$ due to a strong magnetoelectric coupling. Multiphonon and multimagnon scattering is also observed in Raman spectra. Microwave and THz permittivity is strongly influenced by hopping electronic conductivity, which is caused by small non-stoichiometry of the sample. Thermoelectric measurements show room-temperature concentration of free carriers $n_{e}=$ 3.6 10 $^{20}$ cm $^{-3}$ and the sample composition Sr $^{2+}$ Mn $_{0.98}^{4+}$ Mn $_{0.02}^{3+}$ O $_{2.99}^{2-}$ . The conductivity exhibits very unusual temperature behavior: THz conductivity increases on cooling, while the static conductivity markedly decreases on cooling. We attribute this to different conductivity of the ceramic grains and grain boundaries.

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