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V. Sandomirsky

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cond-mat.other

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preprint2009arXiv

Thermal Wave Induced Edge Electrical Field of Pyroelectric: Spatial Pattern Mapping and Effect of Ambient Conditions

We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work we measured and characterized the EDEF, excited by a harmonical thermal wave. We present here experimental results obtained on a pyroelectric crystal LiTaO3, confirming our theoretical predictions. We present the theoretical analysis and description of the thermal wave and the induced harmonically varying EDEF. The calculations assume an equivalent circuit of a pyroelectric capacitive current source. The measured magnitude of the EDEF and its spatial variation agree well with the theoretical model. The effect of the air pressure at the pyroelectric/air interface, on the EDEF, was determined in the interval 10^3 - 10^-6 torr. We found that EDEF increases significantly with decreasing air pressure, presumably due to diminishing of adsorption screening at the polar faces. Teflon plates, covering the polar faces, prevent accumulation of screening charged particles, resulting in a drastic increase of EDEF.

preprint2006arXiv

Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the dielectric layer in the Gate-Dielectric-PbTe structure. Due to the large dielectric constant of SrTiO3, particularly at low temperatures, the electric displacement D in the film reaches the high value of about 10^8 V/cm, and the EFE introduced charge into the PbTe film amounts to ~ 8 microC/cm2. The high D permits to measure the EFE resistance and Hall constant over a wide region of D, revealing the characteristic features of their D-dependence. An appropriate theoretical model has been formulated, showing that, for such films, one can measure the dependence of the Fermi level on D. In fact, we demonstrate that shifting the Fermi level across the gap by varying D, the density-of-states of the in-gape states can be mapped out. Our results show, that the PbTe layers studied, possess a mobility gap exceeding the gap of bulk PbTe.