Researcher profile

V. N. Stavrou

V. N. Stavrou contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2014arXiv

Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots

Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented.

preprint2011arXiv

Surface scattering velocities in III-nitride quantum well laser structures via the emission of hybrid phonons

We have theoretically and numerically studied nitride-based quantum well (QW) laser structures. More specifically, we have used a QW made with III-nitride where the width of the barrier region is large relative to the electron mean free path, and we have calculated the electron surface capture velocities by considering an electron flux which is captured into the well region. The process is assisted by the emission of the longitudinal optical phonons as predicted by the hybrid (HB) model. The results of surface capture velocities via the emission of HB phonons are compared to the emission of the dielectric continuum phonons (Zakhleniuk et al 1999 Phys. Status Solidi a 176 79). Our investigation shows that the two different phonon models predict almost the same results for the non-retarded limit. Furthermore, the surface capture velocities strongly depend on the size of the structure and the heterostructure materials. Lastly, a comparison to the recent experimental values shows that our model could accurately describe the experimentally measured parameters of the quantum capture processes.

preprint2010arXiv

Electron scattering and capture rates in quantum wells by emission of hybrid optical phonons

Intra and intersubband scattering rates and electron capture rates are considered when mediated by hybrid optical phonons in an AlAs/GaAs/AlAs double heterostructure confined between two outer metallic barriers. In evaluating scattering rates we concentrate first on an infinite quantum well for the electrons and show that the presence of the outer metal barriers results in reductions of the intra and intersubband scattering rates due to the suppression of the interface-like modes. For a quantum well (QW) with a finite depth we find that the outer barriers are responsible for the existence of a discrete energy spectrum above the well. The electron capture process under these circumstances is defined as the electron transition from the first electron subband above the well to all possible subbands inside the well by the emission of hybrid phonons. Explicit calculations reveal that the capture rates are characterized by sharp peaks, referred to as electron resonances which arise when a new electron state is generated on increasing the quantum well width. Other sharp peaks are identified as phonon resonances and arise when the energy of the initial state differs by a phonon energy from an electron state at the bottom of a quantum well subband.