Researcher profile

V. N. Neverov

V. N. Neverov contributes to research discovery and scholarly infrastructure.

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cond-mat.supr-con cond-mat.mes-hall cond-mat.dis-nn cond-mat.mtrl-sci

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preprint2020arXiv

Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites

We present the results of a comparative analysis of the magnetocaloric effect (MCE) in Pr0.7Sr0.2Ca0.1MnO3, through direct and indirect measurements, using experimentally measured magnetization, specific heat, magnetostriction, resistivity, thermal diffusivity and thermal conductivity parameters. We have demonstrated that the change in each parameter in response to a magnetic field near the ferromagnetic-paramagnetic phase transition temperature of the material correlates with the change in magnetic entropy. These findings allow us to interrelate these parameters and provide an alternative, effective approach for accessing the usefulness of magnetocaloric materials.

preprint2014arXiv

Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary

We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the critical temperature decrease with increasing of the disorder parameter (d-wave pairing) while in the case of the underdoped system the critical temperature remains constant and (dHc2/dT)|Tc increases with increasing of the disorder (s-wave pairing). These features suggest a possible implementation of the complex mixture state as the (s+id)-pairing.

preprint2012arXiv

Upper critical field in electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$: two-gap model

We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.

preprint2011arXiv

Doping effect on the anomalous behavior of the Hall effect in electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$

Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with $R_H$$^n$(x) analysis an anomalous sign reversal of Hall effect in mixed state at $B<B_{c2}$ may be ascribed to a flux-flow regime for two types of carriers with opposite charges.

preprint2010arXiv

Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder

Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of the back-flow of vortices owing to the pinning forces.

preprint2002arXiv

Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures

Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attributed to the interplay of the classical cyclotron motion and the EEI effect. The Hartree part of the interaction constant is estimated (F_/sigma = 0.44) and the WL and EEI contributions to the total quantum correction /Delta /sigma at B = 0 are separated (/Delta /sigma_{WL} ~ 0.3/Delta /sigma; /Delta /sigma_{EEI} ~ 0.7/Delta /sigma).

preprint2001arXiv

Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well

A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the quasi-two-dimensional hole gas. In the QWs of intermediate widths and hole densities, this negative magnetoresistance may be explained as being caused by suppression of the intersubband scattering due to the upper subband depopulation. For the widest QWs with the highest hole densities, in which the hole gas is divided into two sublayers, similar negative magnetoresistance was observed and tentatively interpreted as also been due to suppression of the intersubband scattering, but subbands are the lowest symmetric and antisymmetric states of the double quantum well structure. These subbands shift under the in-plane magnetic field not vertically in energy, but horizontally along the wave vector.