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Researcher profile

V. G. Leiman

V. G. Leiman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2016arXiv

Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the two-dimensional plasmons in relatively dense networks of randomly oriented CNTs (CNT "felt") and predicts the detector responsivity spectral characteristics. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. We demonstrate that the excitation of the two-dimensional plasmons by incoming THz radiation the detector responsivity can induce sharp resonant peaks of the detector responsivity at the signal frequencies corresponding to the plasmonic resonances. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.

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preprint2014arXiv

Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation

We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of top GL, resulting in the drain current oscillations. To estimate the device responsivity, we solve the hydrodynamic equations for the electrons and holes in graphene governing the plasma-wave response, and the equation describing the graphene membrane oscillations. The combined plasma-mechanical resonance raises the current amplitude by up to four orders of magnitude. The use of graphene as a material for the elastic gate and conductive channel allows the voltage tuning of both resonant frequencies in a wide range.

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preprint2013arXiv

Double injection, resonant-tunneling recombination, and current-voltage characteristics in double-graphene-layer structures

We evaluate the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and holes. Using the proposed model, we derive analytical expressions for the spatial distributions of the electron and hole Fermi energies and the energy gap between the Dirac points in GLs as well as their dependences on the bias and gate voltages. The current-voltage characteristics are calculated as well. % The model is based on hydrodynamic equations for the electron and hole transport in GLs under the self-consistent electric field. It is shown that in undoped double-GL structures with weak scattering of electrons and holes on disorder, the Fermi energies and the energy gap are virtually constant across the main portions of GLs, although their values strongly depend on the voltages and recombination parameters. In contrast, the electron and hole scattering on disorder lead to substantial nonuniformities. The resonant inter-GL tunneling enables N-shaped current-voltage characteristics provided that GLs are sufficiently short. The width of the current maxima is much larger than the broadening of the tunneling resonance. In the double-GL structures with relatively long GLs the N-shaped characteristics transform into the Z-shaped characteristics. % The obtained results are in line with the experimental observations \cite{1} and might be useful for design and optimization of different devices based on double-GL structures, including field-effect transistors and terahertz lasers.

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preprint2012arXiv

Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator

We analyze the dynamic operation of an optical modulator based on double graphene-layer(GL) structure utilizing the variation of the GL absorption due to the electrically controlled Pauli blocking effect. The developed device model yields the dependences of the modulation depth on the control voltage and the modulation frequency. The excitation of plasma oscillations in double-GL structure can result in the resonant increase of the modulation depth, when the modulation frequency approaches the plasma frequency, which corresponds to the terahertz frequency for the typical parameter values.

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preprint2012arXiv

Effect of self-consistent electric field on characteristics of graphene p-i-n tunneling transit-time diodes

We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for the features of the interband tunneling generation of electrons and holes and their ballistic transport in the device i-section, as well as the effect of the self-consistent electric field associated with the charges of propagating electrons and holes. Using the developed model, we calculate the dc current-voltage characteristics and the small-signal ac frequency-dependent admittance as functions of the GTUNNETT structural parameters, in particular, the number of graphene layers and the dielectric constant of the surrounding media. It is shown that the admittance real part can be negative in a certain frequency range. As revealed, if the i-section somewhat shorter than one micrometer, this range corresponds to the terahertz frequencies. Due to the effect of the self-consistent electric field, the behavior of the GTUNNETT admittance in the range of its negativity of its real part is rather sensitive to the relation between the number of graphene layers and dielectric constant. The obtained results demonstrate that GTUNNETTs with optimized structure can be used in efficient terahertz oscillators.

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