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V. F. Maisi

V. F. Maisi contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

A superconductor free of quasiparticles for seconds

Superconducting devices, based on the Cooper pairing of electrons, play an important role in existing and emergent technologies, ranging from radiation detectors to quantum computers. Their performance is limited by spurious quasiparticle excitations formed from broken Cooper pairs. Efforts to achieve ultra-low quasiparticle densities have reached time-averaged numbers of excitations on the order of one in state-of-the-art devices. However, the dynamics of the quasiparticle population as well as the time scales for adding and removing individual excitations remain largely unexplored. Here, we experimentally demonstrate a superconductor completely free of quasiparticles for periods lasting up to seconds. We monitor the quasiparticle number on a mesoscopic superconductor in real time by measuring the charge tunneling to a normal metal contact. Quiet, excitation-free periods are interrupted by random-in-time Cooper pair breaking events, followed by a burst of charge tunneling within a millisecond. Our results demonstrate the possibility of operating devices without quasiparticles with potentially improved performance. In addition, our experiment probes the origins of nonequilibrium quasiparticles in our device; the decay of the Cooper pair breaking rate over several weeks following the initial cooldown rules out processes arising from cosmic or long-lived radioactive sources.

preprint2020arXiv

Ambipolar Transport in Narrow Bandgap Semiconductor InSb Nanowires

We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by a resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1-$μ$m-long device made from a nanowire of 50 nm in diameter, we extract a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260-nm-long device is found to exhibit a finite off-state current and a hole, on-state, circumference-normalized current of 11 $μ$A/$μ$m at V$_D$ = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits.

preprint2013arXiv

Single quasiparticle excitation dynamics on a superconducting island

We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution allowing us to determine Cooper pair breaking rate to be less than 3 kHz. By tuning the Coulomb energy of the island to have an odd number of electrons, one of them remains unpaired. We detect it by measuring its relaxation rate via tunneling. By injecting electrons with a periodic gate voltage, we probe electron-phonon interaction and relaxation down to a single quasiparticle excitation pair, with a measured recombination rate of 8 kHz. Our experiment yields a strong test of BCS-theory in aluminum as the results are consistent with it without free parameters.

preprint2012arXiv

Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds n_qp < 0.033 um^-3 and γ< 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.

preprint2011arXiv

Andreev tunneling in charge pumping with SINIS turnstiles

We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under radio-frequency pumping. The data is well accounted for by numerical simulations. We verify the dependence of the Andreev tunneling rate on the turnstile&#39;s charging energy. Increasing the charging energy effectively suppresses the Andreev current.

preprint2011arXiv

Real-time observation of discrete Andreev tunneling events

We provide a direct proof of two-electron Andreev transitions in a superconductor - normal metal tunnel junction by detecting them in a real-time electron counting experiment. Our results are consistent with ballistic Andreev transport with an order of magnitude higher rate than expected for a uniform barrier, suggesting that only part of the interface is effectively contributing to the transport. These findings are quantitatively supported by our direct current measurements in single-electron transistors with similar tunnel barriers.

preprint2010arXiv

Environmentally Activated Tunneling Events in a Hybrid Single-Electron Box

We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor-normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a manner that is consistent with activation of first-order tunneling events by an external dissipative electromagnetic environment. We demonstrate that the rates for energetically unfavourable tunneling events saturate to finite values at low temperatures, and that the saturation level can be suppressed by more than an order of magnitude by a capacitive shunt near the device. The findings are important in assessing the performance limits of any single-electronic device. In particular, master equation based simulations show that the electromagnetic environment realized in the capacitively shunted devices allows for a metrologically accurate charge pump based on hybrid tunnnel junctions.