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V. F. Maisi

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Published work

18 published item(s)

preprint2022arXiv

A superconductor free of quasiparticles for seconds

Superconducting devices, based on the Cooper pairing of electrons, play an important role in existing and emergent technologies, ranging from radiation detectors to quantum computers. Their performance is limited by spurious quasiparticle excitations formed from broken Cooper pairs. Efforts to achieve ultra-low quasiparticle densities have reached time-averaged numbers of excitations on the order of one in state-of-the-art devices. However, the dynamics of the quasiparticle population as well as the time scales for adding and removing individual excitations remain largely unexplored. Here, we experimentally demonstrate a superconductor completely free of quasiparticles for periods lasting up to seconds. We monitor the quasiparticle number on a mesoscopic superconductor in real time by measuring the charge tunneling to a normal metal contact. Quiet, excitation-free periods are interrupted by random-in-time Cooper pair breaking events, followed by a burst of charge tunneling within a millisecond. Our results demonstrate the possibility of operating devices without quasiparticles with potentially improved performance. In addition, our experiment probes the origins of nonequilibrium quasiparticles in our device; the decay of the Cooper pair breaking rate over several weeks following the initial cooldown rules out processes arising from cosmic or long-lived radioactive sources.

preprint2020arXiv

Ambipolar Transport in Narrow Bandgap Semiconductor InSb Nanowires

We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by a resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1-$μ$m-long device made from a nanowire of 50 nm in diameter, we extract a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260-nm-long device is found to exhibit a finite off-state current and a hole, on-state, circumference-normalized current of 11 $μ$A/$μ$m at V$_D$ = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits.

preprint2016arXiv

InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and thus provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices, and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

preprint2015arXiv

Interplay of charge and vorticity quantization in superconducting Coulomb blockaded island

The angular momentum or vorticity of Cooper pairs is shown to affect strongly the charge transfer through a small superconducting (S) island of a single electron transistor. This interplay of charge and rotational degrees of freedom in a mesoscopic superconductor occurs through the effect of vorticity on the quantum mechanical spectrum of electron-hole excitations. The subgap quasiparticle levels in vortices can host an additional electron, thus, suppressing the so-called parity effect in the S island. We propose to measure this interaction between the quantized vorticity and electric charge via the charge pumping effect caused by alternating vortex entry and exit controlled by a periodic magnetic field.

preprint2015arXiv

Microwave Emission from Hybridized States in a Semiconductor Charge Qubit

We explore the microwave radiation emitted from a biased double quantum dot due to the inelastic tunneling of single charges. Radiation is detected over a broad range of detuning configurations between the dot energy levels with pronounced maxima occurring in resonance with a capacitively coupled transmission line resonator. The power emitted for forward and reverse resonant detuning is found to be in good agreement with a rate equation model, which considers the hybridization of the individual dot charge states.

preprint2015arXiv

On-chip error counting for hybrid metallic single-electron turnstiles

We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low repetition rates we observe errorless sequential transfer of up to several hundred electrons through the system. At faster pumping speeds up to 100 kHz, we show relative error rates down to 10^-3, comparable to typical values obtained from measurements of average pumped current in non-optimized individual turnstiles. The work constitutes an initial step towards a self-referenced current standard realized with metallic single-electron turnstiles, complementing approaches based on semiconductor quantum dot pumps. It is the first demonstration of on-chip pumping error detection at operation frequencies exceeding the detector bandwidth, in a configuration where the average pumped current can be simultaneously measured. The scheme in which electrons are counted from the superconducting lead of the turnstile, instead of direct probing of the normal metal island, also enables studies of fundamental higher-order tunneling processes in the hybrid structures, previously not in reach with simpler configurations.

preprint2015arXiv

Spin orbit coupling at the level of a single electron

We utilize electron counting techniques to distinguish a spin conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99 % in terms of resolving whether a tunneling event occurred with a spin flip or not.

preprint2014arXiv

Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscope imaging

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.

preprint2014arXiv

Experimental realization of a Szilard engine with a single electron

The most succinct manifestation of the second law of thermodynamics is the limitation the Landauer principle imposes on the amount of heat a Maxwell demon (MD) can convert into free energy per single bit of information obtained in a measurement. We suggest and experimentally realize a reversible electronic MD based on a single-electron box operated as a Szilard engine, providing the first demonstration of this limitation: extraction of kT ln 2 of heat from the reservoir at temperature T per one bit of created information. The information is encoded in the position of an extra electron in the box.

preprint2014arXiv

Full Counting Statistics of Andreev Tunneling

We employ a single-charge counting technique to measure the full counting statistics (FCS) of Andreev events in which Cooper pairs are either produced from electrons that are reflected as holes at a superconductor/normal-metal interface or annihilated in the reverse process. The FCS consists of quiet periods with no Andreev processes, interrupted by the tunneling of a single electron that triggers an avalanche of Andreev events giving rise to strongly super-Poissonian distributions.

preprint2013arXiv

Single quasiparticle excitation dynamics on a superconducting island

We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution allowing us to determine Cooper pair breaking rate to be less than 3 kHz. By tuning the Coulomb energy of the island to have an odd number of electrons, one of them remains unpaired. We detect it by measuring its relaxation rate via tunneling. By injecting electrons with a periodic gate voltage, we probe electron-phonon interaction and relaxation down to a single quasiparticle excitation pair, with a measured recombination rate of 8 kHz. Our experiment yields a strong test of BCS-theory in aluminum as the results are consistent with it without free parameters.

preprint2012arXiv

Probing quasiparticle excitations in a hybrid single electron transistor

We investigate the behavior of quasiparticles in a hybrid electron turnstile with the aim of improving its performance as a metrological current source. The device is used to directly probe the density of quasiparticles and monitor their relaxation into normal metal traps. We compare different trap geometries and reach quasiparticle densities below 3um^-3 for pumping frequencies of 20 MHz. Our data show that quasiparticles are excited both by the device operation itself and by the electromagnetic environment of the sample. Our observations can be modelled on a quantitative level with a sequential tunneling model and a simple diffusion equation.

preprint2012arXiv

Single-electron current sources: towards a refined definition of ampere

Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus of research for metrological purposes. In this review we first discuss the generic physical phenomena and technical constraints that influence charge transport. We then present the broad variety of proposed realizations. Some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently "just" wild ideas, still often potentially competitive if technical constraints can be lifted. We also discuss the important issues of read-out of single-electron events and potential error correction schemes based on them. Finally, we give an account of the status of single-electron current sources in the bigger framework of electric quantum standards and of the future international SI system of units, and briefly discuss the applications and uses of single-electron devices outside the metrological context.

preprint2012arXiv

Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds n_qp < 0.033 um^-3 and γ< 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.

preprint2011arXiv

Andreev tunneling in charge pumping with SINIS turnstiles

We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under radio-frequency pumping. The data is well accounted for by numerical simulations. We verify the dependence of the Andreev tunneling rate on the turnstile's charging energy. Increasing the charging energy effectively suppresses the Andreev current.

preprint2011arXiv

Real-time observation of discrete Andreev tunneling events

We provide a direct proof of two-electron Andreev transitions in a superconductor - normal metal tunnel junction by detecting them in a real-time electron counting experiment. Our results are consistent with ballistic Andreev transport with an order of magnitude higher rate than expected for a uniform barrier, suggesting that only part of the interface is effectively contributing to the transport. These findings are quantitatively supported by our direct current measurements in single-electron transistors with similar tunnel barriers.

preprint2010arXiv

Environmentally Activated Tunneling Events in a Hybrid Single-Electron Box

We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor-normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a manner that is consistent with activation of first-order tunneling events by an external dissipative electromagnetic environment. We demonstrate that the rates for energetically unfavourable tunneling events saturate to finite values at low temperatures, and that the saturation level can be suppressed by more than an order of magnitude by a capacitive shunt near the device. The findings are important in assessing the performance limits of any single-electronic device. In particular, master equation based simulations show that the electromagnetic environment realized in the capacitively shunted devices allows for a metrologically accurate charge pump based on hybrid tunnnel junctions.

preprint2010arXiv

Photon assisted tunneling as an origin of the Dynes density of states

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a resistive low-ohmic environment, this DOS reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.