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Researcher profile

V. Estevez

V. Estevez contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

3 published item(s)

preprint2010arXiv

Absence of scaling in transport through two-dimensional nanoparticle arrays

We analyze the transport in disordered two-dimensional nanoparticle arrays. We show that the commonly used scaling hypothesis to fit the I-V curves does not describe the electronic transport in these systems. On the contrary, close to the threshold voltage V_T the current depends linearly on (V-V_T). This linear behavior is observed for at least five decades in (V-V_T). Fitting the I-V curves at larger voltages to a scaling power-law I \propto (V/V_T-1)^ξresults in fitting parameters which depend on the range of voltages used and in wrong values for V_T. Our results urge to change the picture of electronic transport in disordered nanoparticle arrays used in the last two decades.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Huge enhancement of the magnetoresistance in nanoparticle arrays

We show that the interplay between charging effects and the non-equilibrium spin accumulation has a dramatic effect in the current through an array of nanostructures attached to ferromagnetic electrodes. Large oscillations in the current as a function of bias voltage show up for parallel orientation of the electrodes' magnetizations. These oscillations originate in the inhomogeneity of the spin potentials through the array and correlate with oscillations in the spin accumulation. For antiparallel orientation the spin potential is homogeneous and the oscillations do not show up.This sensitivity results in a huge enhancement of the tunneling magnetoresistance as compared to the single-island case, and open new routes for improving the spintronic response of nanodevices.

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preprint2010arXiv

Robustness of the magnetoresistance of nanoparticle arrays

Recent work has found that the interplay between spin accumulation and Coulomb blockade in nanoparticle arrays results in peaky I-V and tunneling magnetoresistance (TMR) curves and in huge values of the TMR. We analyze how these effects are influenced by a polarization asymmetry of the electrodes, the dimensionality of the array, the temperature, resistance or charge disorder and long-range interactions. We show that the magnitude and voltage dependence of the TMR does not change with the dimensionality of the array or the presence of junction resistance disorder. A different polarization in the electrodes modifies the peak shape in the I-V and TMR curves but not their order of magnitude. Increasing the temperature or length of the interaction reduces to some extent the size of the peaks, being the reduction due to long-range interactions smaller in longer arrays. Charge disorder should be avoided to observe large TMR values.

0 citations0 reviewsNo code linkedOpen access