Researcher profile

Umesh V Waghmare

Umesh V Waghmare contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Co-substituted BiFeO3: electronic, ferroelectric, and thermodynamic properties from first principles

Bismuth ferrite, BiFeO3, is a multiferroic solid that is attracting increasing attention as a potential photocatalytic material, because the ferroelectric polarisation enhances the separation of photogenerated carriers. With the motivation of finding routes to engineer the band gap and the band alignment, while conserving or enhancing the ferroelectric properties, we have investigated the thermodynamic, electronic and ferroelectric properties of BiCoxFe1 xO3 solid solutions, with 0 < x < 0.13, using density functional theory. We show that the band gap can be reduced from 2.9 eV to 2.1 eV by cobalt substitution, while simultaneously increasing the spontaneous polarisation, which is associated with a notably larger Born effective charge of Co compared to Fe cations. We discuss the interaction between Co impurities, which is strongly attractive and would drive the aggregation of Co, as evidenced by Monte Carlo simulations. Phase separation into a Co-rich phase is therefore predicted to be thermodynamically preferred, and the homogeneous solid solution can only exist in metastable form, protected by slow cation diffusion kinetics. Finally, we discuss the band alignment of pure and Co-substituted BiFeO3 with relevant redox potentials, in the context of its applicability in photocatalysis.

preprint2016arXiv

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

The discovery of strong topological insulators led to enormous activity in condensed matter physics and the discovery of new types of topological materials. Bisumth based chalcogenides are exemplary strong three dimensional topological insulators that host an odd number of massless Dirac fermionic states on all surfaces. A departure from this notion is the idea of a weak topological insulator, wherein only certain surface terminations host surface states characterized by an even number of Dirac cones leading to exciting new physics. Experimentally however, weak topological insulators have proven to be elusive. Here, we report a discovery of a weak topological insulator (WTI), BiSe, of the Bi-chalcogenide family with an indirect band gap of 42 meV. Its structural unit consists of bismuth bilayer (Bi$_2$), a known quantum spin hall insulator sandwiched between two units of Bi$_2$Se$_3$ which are three dimensional strong topological insulators. Angle resolved photo-emission spectroscopy (ARPES) measurements on cleaved single crystal flakes along with density fucntional theory (DFT) calculations confirm the existence of weak topological insulating state of BiSe. Additionally, we have carried out magneto-transport measurements on single crystal flakes as well as thin films of BiSe, which exhibit clear signatures of weak anti-localization at low temperatures, consistent with the properties of topological insulators.

preprint2010arXiv

Anisotropy of the Stone-Wales Defect and Warping of Graphene Nano-ribbons: A First-principles Analysis

Stone-Wales (SW) defects, analogous to dislocations in crystals, play an important role in mechanical behavior of $sp^2$-bonded carbon based materials. Here, we show using first-principles calculations that a marked anisotropy in the interaction among the SW defects has interesting consequences when such defects are present near the edges of a graphene nano-ribbon: depending on their orientation with respect to edge, they result in compressive or tensile stress, and the former is responsible to depression or warping of the graphene nano-ribbon. Such warping results in delocalization of electrons in the defect states.