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Łucja Kipczak

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3 publications

preprint2023arXiv

Multidimensional sensing of proximity magnetic fields via intrinsic activation of dark excitons in WSe2_2/CrCl3_3 heterostructure

Quantum phenomena at interfaces create functionalities at the level of materials. Ferromagnetism in van der Waals systems with diverse arrangements of spins opened a pathway for utilizing proximity magnetic fields to activate properties of materials which would otherwise require external stimuli. Herewith, we realize this notion via creating heterostructures comprising bulk CrCl3_3 ferromagnet with in-plane easy-axis magnetization and monolayer WSe2_2 semiconductor. We demonstrate that the in-plane component of the proximity field activates the dark excitons within WSe2_2. Zero-external-field emission from the dark states allowed us to establish the in-plane and out-of-plane components of the proximity field via inspection of the emission intensity and Zeeman effect, yielding canted orientations at the degree range of 10∘10^{\circ} −- 30∘30^{\circ} at different locations of the heterostructures, attributed to the features of interfacial topography. Our findings are relevant for the development of spintronics and valleytronics with long-lived dark states in technological timescales and sensing applications of local magnetic fields realized simultaneously in multiple dimensions.

preprint2022arXiv

The effect of dielectric environment on the brightening of neutral and charged dark excitons in WSe2_2 monolayer

The dielectric environment of atomically-thin monolayer (ML) of semiconducting transition metal dichalcogenides affects both the electronic band gap and the excitonic binding energy in the ML. We investigate the effect of the environment on the in-plane magnetic field brightening of neutral and charged dark exciton emissions in the WSe2_2 ML. The monolayers placed in three dielectric environments are studied, in particular, the ML encapsulated in hexagonal BN (hBN) flakes, the ML deposited on a hBN layer, and the ML embedded between the hBN flake and SiO2_2/Si substrate. We observe that the brightening rates of the neutral and charged dark excitons depend on the dielectric environment, which may be related to the variation of the level of carrier concentration in the ML. Moreover, the surrounding media, characterized by different dielectric constants, influences weakly the relative energies of the neutral and charged dark excitons in reference to the bright ones.

preprint2021arXiv

Anisotropic Optical And Vibrational Properties Of GeS

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is shown that while the low-temperature (TT=5 K) optical band-gap absorption is governed by a single resonance related to the neutral exciton, the corresponding emission is dominated by the disorder/impurity- and/or phonon-assisted recombination processes. Both the RC and PL spectra are found to be linearly polarized along the armchair direction. The low and room (TT=300 K) temperature RS spectra consist of six Raman peaks identified with the help of Density Fuctional Theory (DFT) calculations: Ag1^1_{\textrm{g}}, Ag2^2_{\textrm{g}}, Ag3^3_{\textrm{g}}, Ag4^4_{\textrm{g}}, B1g1^1_{\textrm{1g}}, and B1g2^2_{\textrm{1g}}, which polarization properties are studied under four different excitation energies. We found that the polarization orientations of the Ag2^2_{\textrm{g}} and Ag4^4_{\textrm{g}} modes under specific excitation energy can be useful tools to determine the GeS crystallographic directions: armchair and zigzag.

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