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Researcher profile

U. Hübner

U. Hübner contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

2 published item(s)

preprint2020arXiv

Controlling the energy gap of a tunable two-level system by ac drive

We study the influence of a strong off-resonant driving signal to the energy levels of a superconducting flux qubit both experimentally and theoretically. In the experiment, we carry out a three-tone spectroscopy. This allows us to directly observe the modification of the qubit's energy levels by the dynamical Stark shift caused by the driving signal. A theoretical treatment including corrections from both, rotating and counter-rotating frame, allowed us to completely explain the observed experimental results and to reconstruct the influence of the strong driving to the dissipative dynamics as well as to the coupling constants of the qubit. As one potential application, the tunability of the minimal energy-level splitting of a superconducting qubit by a microwave induced dynamical Stark shift can help to overcome the parameter spread induced by the micro fabrication of superconducting artificial quantum circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (wavelength = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we unambiguously show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large amount of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis towards the defect-based engineering of the electronic and optical properties of TMDs for device applications.

0 citations0 reviewsNo code linkedOpen access