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U. C. Coskun

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3works
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4close collaborators

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3 publications

preprint2012arXiv

Phonon bottleneck in graphene-based Josephson junctions at millikelvin temperatures

We examine the nature of the transitions between the normal and the superconducting branches of superconductor-graphene-superconductor Josephson junctions. We attribute the hysteresis between the switching (superconducting to normal) and retrapping (normal to superconducting) transitions to electron overheating. In particular, we demonstrate that the retrapping current corresponds to the critical current at an elevated temperature, where the heating is caused by the retrapping current itself. The superconducting gap in the leads suppresses the hot electron outflow, allowing us to further study electron thermalization by phonons at low temperatures (T≲1T \lesssim 1K). The relationship between the applied power and the electron temperature was found to be P∝T3P\propto T^3, which we argue is consistent with cooling due to electron-phonon interactions.

preprint2011arXiv

Distribution of supercurrent switching in graphene under proximity effect

We study the stochastic nature of switching current in hysteretic current-voltage characteristics of superconductor-graphene-superconductor (SGS) junctions. We find that the dispersion of the switching current distribution scales with temperature as a power law with the power close to 1/3. This observation is in sharp contrast with the known Josephson junction behavior where switching current dispersion is expected to scale with the power 2/3. We propose an explanation using a generalized version of Kurkijarvi's theory for the flux stability in rf-SQUID and attribute this anomalous effect to the temperature dependence of the critical current which persists down to low temperatures.

preprint2011arXiv

Phase diffusion in graphene-based Josephson junctions

We report on graphene-based Josephson junctions with contacts made from lead. The high transition temperature of this superconductor allows us to observe the supercurrent branch at temperatures up to ∼2\sim 2 K, at which point we can detect a small, but non-zero, resistance. We attribute this resistance to the phase diffusion mechanism, which has not been yet identified in graphene. By measuring the resistance as a function of temperature and gate voltage, we can further characterize the nature of electromagnetic environment and dissipation in our samples.

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