Researcher profile

Tuomas H. E. Lahtinen

Tuomas H. E. Lahtinen contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2013arXiv

Alternating domains with uniaxial and biaxial magnetic anisotropy in epitaxial Fe films on BaTiO3

We report on domain formation and magnetization reversal in epitaxial Fe films on ferroelectric BaTiO3 substrates with ferroelastic a-c stripe domains. The Fe films exhibit biaxial magnetic anisotropy on top of c domains with out-of-plane polarization, whereas the in-plane lattice elongation of a domains induces uniaxial magnetoelastic anisotropy via inverse magnetostriction. The strong modulation of magnetic anisotropy symmetry results in full imprinting of the a-c domain pattern in the Fe films. Exchange and magnetostatic interactions between neighboring magnetic stripes further influence magnetization reversal and pattern formation within the a and c domains.

preprint2013arXiv

Temperature control of local magnetic anisotropy in multiferroic CoFe/BaTiO3

This paper reports on the temperature evolution of local elastic interactions between ferromagnetic CoFe films and ferroelectric BaTiO3 substrates. Polarization microscopy measurements indicate that growth-induced stripe domains in the CoFe films are preserved and strengthened during cooling and heating through the structural phase transitions of BaTiO3. Moreover, rotation of the magnetic easy axes at the tertragonal-to-orthorhombic transition (T = 278 K) and at T = 380 K simultaneously switches the local magnetization of both uniaxial domains by 90 degrees. Irreversible changes in the ferromagnetic domain pattern are induced when the room-temperature ferroelectric domain structure is altered after temperature cycling.

preprint2012arXiv

Field Tuning of Ferromagnetic Domain Walls on Elastically Coupled Ferroelectric Domain Boundaries

We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate that the spin rotation and width of ferromagnetic domain walls can be accurately controlled by the strength of the applied magnetic field if the ferromagnetic walls are pinned onto 90 degrees ferroelectric domain boundaries. Moreover, reversible switching between magnetically charged and uncharged domain walls is initiated by magnetic field rotation. Switching between both wall types reverses the wall chirality and abruptly changes the width of the ferromagnetic domain walls by up to 1000%.

preprint2011arXiv

Electric-field control of magnetic domain wall motion and local magnetization reversal

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here, we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in multiferroic CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to multiferroic spintronic devices.