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Tue Gunst

Tue Gunst appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

11 published item(s)

preprint2020arXiv

First principles evaluation of fcc ruthenium for use in advanced interconnects

As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensively studied, but relatively little attention has been paid to the face-centered cubic (fcc) phase, which has been shown to nucleate in confined structures and may be present in tight-pitch interconnects. Using \emph{ab initio} techniques, we benchmark the performance of fcc Ru. We find that the phonon-limited bulk resistivity of the fcc Ru is less than half of that of hcp Ru, a feature we trace back to the stronger electron-phonon coupling elements that are geometrically inherited from the modified Fermi surface shape of the fcc crystal. Despite this benefit of the fcc phase, high grain boundary scattering results in increased resistivity compared to Cu-based interconnects with similar average grain size. We find, however, that the line resistance of fcc Ru is lower than that of Cu below 21 nm line width due to the conductor volume lost to adhesion and wetting liners. In addition to studying bulk transport properties, we evaluate the performance of adhesion liners for fcc Ru. We find that it is energetically more favorable for fcc Ru to bind directly to silicon dioxide than through conventional adhesion liners such as TaN and TiN. In the case that a thin liner is necessary for the Ru deposition technique, we find that the vertical resistance penalty of a liner for fcc Ru can be up to eight times lower than that calculated for conventional liners used for Cu interconnects. Our calculations, therefore, suggest that the formation of the fcc phase of Ru may be a beneficial for advanced, low-resistance interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inelastic vibrational signals in electron transport across graphene nanoconstrictions

We present calculations of the inelastic vibrational signals in the electrical current through a graphene nanoconstriction. We find that the inelastic signals are only present when the Fermi-level position is tuned to electron transmission resonances, thus, providing a fingerprint which can link an electron transmission resonance to originate from the nanoconstriction. The calculations are based on a novel first-principles method which includes the phonon broadening due to coupling with phonons in the electrodes. We find that the signals are modified due to the strong coupling to the electrodes, however, still remain as robust fingerprints of the vibrations in the nanoconstriction. We investigate the effect of including the full self-consistent potential drop due to finite bias and gate doping on the calculations and find this to be of minor importance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First-principles method for electron-phonon coupling and electron mobility: Applications to 2D materials

We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles. We provide a detailed description of the normalized full-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes inelastic scattering processes. The bulk electron-phonon coupling is evaluated by a supercell method. The method employed is fully numerical and does therefore not require a semi-analytic treatment of part of the problem and, importantly, it keeps the anisotropy information stored in the coupling as well as the band structure. In addition, we perform calculations of the low-field mobility and its dependence on carrier density and temperature to obtain a better understanding of transport in graphene, silicene and monolayer MoS$_2$. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. We find that graphene has more than an order of magnitude higher mobility compared to silicene. For MoS$_2$, we obtain several orders of magnitude lower mobilities in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented BTE solver applied in simulation tools based on first-principles and localized basis sets.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Manipulating the voltage drop in graphene nanojunctions using a gate potential

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby influencing its conductance. Here we investigate the impact of electrostatic gating in nanojunctions between graphene electrodes operating at finite bias. Using first principles quantum transport simulations, we show that the voltage drop across \emph{symmetric} junctions changes dramatically and controllably in gated systems compared to non-gated junctions. In particular, for \emph{p}-type(\emph{n}-type) carriers the voltage drop is located close to the electrode with positive(negative) polarity, i.e. the potential of the junction is pinned to the negative(positive) electrode. We trace this behaviour back to the vanishing density of states of graphene in the proximity of the Dirac point. Due to the electrostatic gating, each electrode exposes different density of states in the bias window between the two different electrode Fermi energies, thereby leading to a non-symmetry in the voltage drop across the device. This selective pinning is found to be independent of device length when carriers are induced either by the gate or dopant atoms, indicating a general effect for electronic circuitry based on graphene electrodes. We envision this could be used to control the spatial distribution of Joule heating in graphene nanostructures, and possibly the chemical reaction rate around high potential gradients.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Efficient calculation of inelastic vibration signals in electron transport: Beyond the wide-band approximation

We extend the simple and efficient lowest order expansion (LOE) for inelastic electron tunneling spectroscopy (IETS) to include variations in the electronic structure on the scale of the vibration energies. This enables first-principles calculations of IETS lineshapes for molecular junctions close to resonances and band edges. We demonstrate how this is relevant for the interpretation of experimental IETS using both a simple model and atomistic first-principles simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic and transport properties of kinked graphene

Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalization. Using first principles calculations based on density functional theory (DFT) we investigate the reduction of the reaction barrier for adsorption of atomic hydrogen at linear bends in graphene. We find a significant lowering (15%) for realistic radii of curvature (20 Å), and that adsorption along the linear bend leads to a stable linear kink. We compute the electronic transport properties of individual and multiple kink-lines, and demonstrate how these act as efficient barriers for electron transport. In particular, two parallel kink-lines form a graphene pseudo-nanoribbon structure with a semi-metallic/semi-conducting electronic structure closely related to the corresponding isolated ribbons; the ribbon band gap translates into a transport gap for transport across the kink lines. We finally consider pseudo-ribbon based heterostructures, and propose that such structures present a novel approach for band gap engineering in nanostructured graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Phonon excitation and instabilities in biased graphene nanoconstrictions

We calculate the phonons in a graphene nanoconstriction(GNC) in the presence of a high current density. The Joule-heating, current-induced forces, and coupling to electrode phonons is evaluated using first principles nonequilibrium DFT-NEGF calculations. Close to a resonance in the electronic structure we observe a strongly nonlinear heating with bias and breakdown of the harmonic approximation. This behavior results from negatively damped phonons driven by the current. The effect may limit the stability and capacity of graphene nanoconstrictions to carry high currents.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene antidot lattice waveguides

We introduce graphene antidot lattice waveguides: nanostructured graphene where a region of pristine graphene is sandwiched between regions of graphene antidot lattices. The band gap in the surrounding antidot lattices enable localized states to emerge in the central waveguide region. We model the waveguides via a position-dependent mass term in the Dirac approximation of graphene, and arrive at analytical results for the dispersion relation and spinor eigenstates of the localized waveguide modes. To include atomistic details we also use a tight-binding model, which is in excellent agreement with the analytical results. The waveguides resemble graphene nanoribbons, but without the particular properties of ribbons that emerge due to the details of the edge. We show that electrons can be guided through kinks without additional resistance and that transport through the waveguides is robust against structural disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermoelectric properties of disordered graphene antidot devices

We calculate the electronic and thermal transport properties of devices based on finite graphene antidot lattices (GALs) connected to perfect graphene leads. We use an atomistic approach based on the $π$-tight-binding model, the Brenner potential, and employing recursive Green's functions. We consider the effect of random disorder on the electronic and thermal transport properties, and examine the potential gain of thermoelectric merit by tailoring of the disorder. We propose several routes to optimize the transport properties of the GAL systems. Finally, we illustrate how quantum thermal transport can be addressed by molecular dynamics simulations, and compare to the Green's function results for the GAL systems in the ballistic limit.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Current-induced dynamics in carbon atomic contacts

The effect of electronic current on the atomic motion still poses many open questions, and several mechanisms are at play. Recently there has been focus on the importance of the current-induced non-conservative forces (NC) and Berry-phase derived forces (BP) regarding the stability of molecular-scale contacts. Systems based on molecules bridging electrically gated graphene electrodes may offer an interesting test-bed for these effects. We employ a semi-classical Langevin approach in combination with DFT calculations to study the current-induced vibrational dynamics of an atomic carbon chain connecting electrically gated graphene electrodes. This illustrates how the device stability can be predicted solely from the modes obtained from the Langevin equation including the current induced forces. We point out that the gate offers control of the current independent of bias voltage which can be used to explore current-induced vibrational instabilities due the NC/BP forces. Furthermore, using tight-binding and the Brenner potential we illustrate how Langevin-type molecular dynamics can be performed including the Joule heating effect for the carbon chain systems. Molecular dynamics including current-induced forces enables an energy redistribution mechanism among the modes, mediated by anharmonic interactions, which is found to be vital in the description of the electronic heating. We have developed a semi-classical Langevin equation approach which can be used to explore current-induced dynamics and instabilities. We find instabilities at experimentally relevant bias and gate voltages for the carbon chain system.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermoelectric properties of finite graphene antidot lattices

We present calculations of the electronic and thermal transport properties of graphene antidot lattices with a finite length along the transport direction. The calculations are based on a single orbital tight-binding model and the Brenner potential. We show that both electronic and thermal transport properties converge fast toward the bulk limit with increasing length of the lattice: only a few repetitions (~6) of the fundamental unit cell are required to recover the electronic band gap of the infinite lattice as a transport gap for the finite lattice. We investigate how different antidot shapes and sizes affect the thermoelectric properties. The resulting thermoelectric figure of merit, ZT, can exceed 0.25, and it is highly sensitive to the atomic arrangement of the antidot edges. Specifically, hexagonal holes with pure zigzag edges lead to an order-of-magnitude smaller ZT as compared to pure armchair edges. We explain this behavior as a consequence of the localization of states, which predominantly occurs for zigzag edges, and of an increased splitting of the electronic minibands, which reduces the power factor.

0 citations0 reviewsNo code linkedOpen access