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Source author record

Tongshuai Zhu

Tongshuai Zhu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2022arXiv

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb2SiTe4. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb2SiTe4 to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large dynamical axion field in topological antiferromagnetic insulator Mn$_2$Bi$_2$Te$_5$

The dynamical axion field is a new state of quantum matter where the magnetoelectric response couples strongly to its low-energy magnetic fluctuations. It is fundamentally different from an axion insulator with a static quantized magnetoelectric response. The dynamical axion field exhibits many exotic phenomena such as axionic polariton and axion instability. However, these effects have not been experimentally confirmed due to the lack of proper topological magnetic materials. Here by combining analytic models and first-principles calculations, we predict a series of van der Waal layered Mn$_2$Bi$_2$Te$_5$-related topological antiferromagnetic materials could host the long-sought dynamical axion field with a topological origin. We also show a large dynamical axion field can be achieved in antiferromagnetic insulating states close to the topological phase transition. We further propose the optical and transport experiments to detect such a dynamical axion field. Our results could directly aid and facilitate the search for topological-origin large dynamical axion field in realistic materials.

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preprint2020arXiv

Large Magnetoresistance in Topological Insulator Candidate TaSe3

Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.

0 citations0 reviewsNo code linkedOpen access