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Tomohiro Nozaki

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Exchange-biased quantum anomalous Hall effect

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2O3. Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr2O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2O3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

preprint2016arXiv

Enhancing the blocking temperature of perpendicular-exchange biased Cr2O3 thin films using spacer and buffer layers

In this study, we investigated the effect of spacer and buffer layers on the blocking temperature TB of the perpendicular exchange bias of thin Cr2O3 films, and revealed a high TB of 260 K for 20-nm-thick Cr2O3 thin films. By inserting a Ru spacer layer between the Cr2O3 and Co films and changing the spacer thickness, we controlled the magnitude of the exchange bias and TB. By comparing the TB values of the 20-nm-thick Cr2O3 films on Pt and alpha-Fe2O3 buffers, we investigated the lattice strain effect on the TB. We show that higher TB value can be obtained using an alpha-Fe2O3 buffer, which is likely because of the lattice-strain-induced increase of Cr2O3 magnetic anisotropy.

preprint2014arXiv

Chemical analysis of ligand-free silicon nanocrystal surfaces by surface enhanced Raman spectroscopy

Surface enhanced Raman spectroscopy (SERS) was used to probe the surface chemistry of chlorine-terminated silicon nanocrystal (Si-NC) surfaces in an air-free environment. SERS effect was observed from the thin films of Ag$_x$O using 514 nm laser wavelength. When a monolayer of Si-NCs were spin-coated on Ag$_x$O SERS substrates, a very clear signal of surface states, including Si-Cl$_x$, and Si-H$_x$ were observed. Upon air-exposure, we observed the temporal reduction of Si-Cl$_x$ peak intensity, and a development of oxidation-related peak intensities, like Si-O$_x$ and Si-O-H$_x$. In addition, first, second and third order transverse optical (TO) modes of Si-NCs were also observed at 519, 1000 and 1600 cm$^{-1}$, respectively. As a comparison, Raman analysis of a thick film (> 200 nm) of Si-NCs deposited on ordinary glass substrates were performed. This analysis only demonstrated the first TO mode of Si-NCs, and the all the other features originated from SERS enhancement did not appear in the spectrum. These results conclude that, SERS is not only capable of single-molecule detection, but also a powerful technique for monitoring the surface chemistry of nanoparticles.