Researcher profile

Tome M. Schmidt

Tome M. Schmidt contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Ferromagnetism in armchair graphene nanoribbon heterostructures

We study the properties of flat-bands that appear in a heterostructure composed of strands of different widths of graphene armchair nanoribbons. One of the flat-bands is reminiscent of the one that appears in pristine armchair nanoribbons and has its origin in a quantum mechanical destructive interference effect, dubbed `Wannier orbital states' by Lin et al. in Phys. Rev. B 79, 035405 (2009). The additional flat-bands found in these heterostructures, some reasonably closer to the Fermi level, seem to be generated by a similar interference process. After doing a thorough tight-binding analysis of the band structures of the different kinds of heterostructures, focusing in the properties of the flat-bands, we use Density Functional Theory to study the possibility of magnetic ground states when placing, through doping, the Fermi energy close to the different flat-bands. Our DFT results confirmed the expectation that these heterostructures, after being appropriately hole-doped, develop a ferromagnetic ground state that seems to require, as in the case of pristine armchair nanoribbons, the presence of a dispersive band crossing the flat-band. In addition, we found a remarkable agreement between the tight-binding and DFT results for the charge density distribution of the so-called Wannier orbital states.

preprint2020arXiv

Tuning electronic and optical properties of bismuth monolayers by molecular adsorption

We perform first-principles calculations of electronic and dielectric properties of bismuthene functionalized with small ligands using first-principle calculations. We show that all functionalized structures have topological insulating (TI) behavior with a sizeable gap by calculating the Z$_2$ topological invariant. Furthermore the adsorption of all groups induce a quasi-planar structure to the initially pristine bismuthene structure. Finally we show that the dielectric properties show a large anisotropy with two main in plane absorption peaks.

preprint2016arXiv

Topological Nonsymmorphic Ribbons out of Symmorphic Bulk

States of matter with nontrivial topology have been classified by their bulk symmetry properties. However, by cutting the topological insulator into ribbons, the symmetry of the system is reduced. By constructing effective Hamiltonians containing the proper symmetry of the ribbon, we find that the nature of topological states is dependent on the reduced symmetry of the ribbon and the appropriate boundary conditions. We apply our model to the recently discovered two-dimensional topological crystalline insulators composed by IV-VI monolayers, where we verify that the edge terminations play a major role on the Dirac crossings. Particularly, we find that some bulk cuts lead to nonsymmorphic ribbons, even though the bulk material is symmorphic. The nonsymmorphism yields a new topological protection, where the Dirac cone is preserved for arbitrary ribbon width. The effective Hamiltonians are in good agreement with ab initio calculations.

preprint2011arXiv

Spin-texture and magnetic anisotropy of Co adsorbed Bi$_2$Se$_3$ topological insulator surfaces

Based upon first-principles methods, we investigate the magnetic anisotropy and the spin-texture of Co adatoms embedded in the topmost Se network of the topological insulator Bi$_2$Se$_3$ surface. We find the formation of energetically stable magnetic moment perpendicular to the surface plane, S$_z$. Our results for the pristine Bi$_2$Se$_3$ surface indicate the presence of helical spin-texture not only in the massless surface Dirac states, but also surface states resonant within the valence band present spin-texture. On the other hand, upon the presence of Co adatoms we find that the out-of-plane surface magnetism represents the dominant spin state (S$_z$), while the planar spin components, S$_x$ and S$_y$, are almost suppressed.