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Tobias Heuser

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Published work

3 published item(s)

preprint2021arXiv

Spin-lasing in bimodal quantum dot micropillar cavities

Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited by the intensity dynamics, but are governed primarily by the interaction of the spin dynamics with the birefringent mode splitting that determines the polarization oscillation frequency. Another class of modern semiconductor lasers are high-beta emitters which benefit from enhanced light-matter interaction due to strong mode confinement in low-mode-volume microcavities. In such structures, the emission properties can be tailored by the resonator geometry to realize for instance bimodal emission behavior in slightly elliptical micropillar cavities. We utilize this attractive feature to demonstrate and explore spin-lasing effects in bimodal high-beta quantum dot micropillar lasers. The studied microlasers with a beta-factor of 4% show spin-laser effects with experimental polarization oscillation frequencies up to 15 GHz and predicted frequencies up to about 100 GHz which are controlled by the ellipticity of the resonator. Our results reveal appealing prospects for very compact, ultra-fast and energy-efficient spin-lasers and can pave the way for future purely electrically injected spin-lasers enabled by short injection path lengths.

preprint2020arXiv

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application.

preprint2016arXiv

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist PMMA. As such, CSAR 62 is a very promising negative-tone resist for in-situ electron-beam lithography of high quality nanostructures at low temperature.