Researcher profile

Ting Luo

Ting Luo contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

The effect of hydrogen on the multiscale mechanical behaviour of a La(Fe,Mn,Si)13-based magnetocaloric material

Magnetocaloric cooling offers the potential to improve the efficiency of refrigeration devices and hence cut the significant CO2 emissions associated with cooling processes. A critical issue in deployment of this technology is the mechanical degradation of the magnetocaloric material during processing and operation, leading to limited service-life. The mechanical properties of hydrogenated La(Fe,Mn,Si)13-based magnetocaloric material are studied using macroscale bending tests of polycrystalline specimens and in situ micropillar compression tests of single crystal specimens. The impact of hydrogenation on the mechanical properties are quantified. Understanding of the deformation/failure mechanisms is aided by characterization with transmission electron microscopy and atom probe tomography to reveal the arrangement of hydrogen atoms in the crystal lattice. Results indicate that the intrinsic strength of this material is ~3-6 GPa and is dependent on the crystal orientation. Single crystals under compressive load exhibit shearing along specific crystallographic planes. Hydrogen deteriorates the strength of La(Fe,Mn,Si)13 through promotion of transgranular fracture. The weakening effect of hydrogen on single crystals is anisotropic; it is significant upon shearing parallel to the {111} crystallographic planes but is negligible when the shear plane is {001}-oriented. APT analysis suggests that this is associated with the close arrangement of hydrogen atoms on {222} planes.

preprint2020arXiv

Effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe

We use the modified Becke-Johnson exchange potential (mBJ) with the spin-orbit coupling effect (SOC) to study effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe. Our results show the fundamental band gap size can be tuned via biaxial strain. Compressive strain (tensile strain) can narrow (enlarge) band gap, and compressive strain causes the transition from quasi-direct to indirect band gap. Moreover, considering that any tuning of electronic structure is realized by changing the periodic potential distribution in the crystalline, we directly add constant potential (CP) to muffin-tin spheres. The results demonstrate that positive and negative CPs can narrow and enlarge band gap, respectively. At CP of 0.9 Ry, semiconductor-metal transition appears, and interestingly a new type of nearly linear dispersions occur at band edge. Our work is good for inspiring more experimental and further theoretical research works.