Researcher profile

Timur Biktagirov

Timur Biktagirov contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Electron-nuclear coherent coupling and nuclear spin readout through optically polarized VB- spin states in hBN

Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time Tcoh = 15 us, close to the theoretically predicted limit of 18 us for spin defects in hBN. Modulation in the MHz range superimposed on the Hahn-echo decay curve are shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei through a nuclear quadrupole interaction of 2.11 MHz. Supporting DFT calculation confirm that the electron-nuclear coupling is confined to the defective layer. Our findings allow an in-depth understanding of the electron-nuclear interactions of the VB- defect in hBN and demonstrate its strong potential in quantum technologies.

preprint2020arXiv

Spin decontamination for magnetic dipolar coupling calculations: Application to high-spin molecules and solid-state spin qubits

An accurate description of the two-electron density, crucial for magnetic coupling in spin systems, provides in general a major challenge for density functional theory calculations. It affects, e.g., the calculated zero-field splitting (ZFS) energies of spin qubits in semiconductors that frequently deviate significantly from experiment. In the present work (i) we propose an efficient and robust strategy to correct for spin contamination in both extended periodic and finite-size systems, (ii) verify its accuracy using model high-spin molecules, and finally (iii) apply the methodology to calculate accurate ZFS of spin qubits (NV$^-$ centers, divacancies) in diamond and silicon carbide. The approach is shown to reduce the dependence on the used exchange-correlation functional to a minimum.