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Tiecheng Lu

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Elucidating the Degradation Mechanism of Gd2Zr2O7 Waste Form under Multi-Energy He Ion Irradiation

We studied the microstructural and helium bubbling evolutions of Gd2Zr2O7 waste form with immobilized TRPO (50 wt%) under multi-energy He ion irradiation. Three structurally heterogeneous regions for the Gd2Zr2O7 waste form were found as a function of the depth from the He-irradiated surface. Specifically, at a depth less than 40 nm below the He-irradiated surface (Region I) the Gd2Zr2O7 waste form is completely amorphous with large spherical He bubbles (5-25 nm). In the intermediate region, Region II, (40-800 nm) partially amorphized Gd2Zr2O7 waste form accompanied with ribbon-like He bubbles that may lead to the formation of microcracks is observed. The crystallinity is not impacted in Region III for a depth of more than 800 nm. For the first time, we elucidated that the Gd2Zr2O7 waste form, which was considered to be structurally intact at 100 dpa, is completely amorphized at 6.5 dpa with the synergistic displacement damage, electronic energy loss, and He concentration enabled. This study leads to new physical insights into amorphization and He bubbles formation mechanisms of Gd2Zr2O7 waste form under multi-energy He irradiation, which is essential for the design and optimization of irradiation-resistant ceramic waste matrices.

preprint2009arXiv

Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150 keV into relatively thick (~640nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C-V) dependences at high frequencies (100 kHz and 1 MHz). Four groups of MOS structures have been studied: The 1st - "initial" samples, without Ge atoms (before ion implantation). The 2nd - "implanted" samples, after Ge+ ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd - samples after formation of Ge nanocrystals by means of annealing at 800 degree C ("NC-Ge" samples), and the 4th - "final" samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10^20 neutrons/cm^2 followed by the annealing of radiation damage. It is shown that in "initial" samples, the C-V characteristics have a step-like form of "S-shape", which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge" samples, C-V characteristics have "U-shape" despite the high frequency operation, In addition, "NC-Ge" samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the "U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. "Final" samples indicate destruction of the observed peculiarities of C-V characteristics and recurrence to the C-V curve of "initial" samples.