Researcher profile

Tiannan Yang

Tiannan Yang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

A Solution to the Temperature Evolution of Multi-well Free-energy Landscape

It has been a grand challenge to resolve the temperature evolution of multi-well free-energy landscape which is fundamentally relevant to phase transitions and associated critical phenomena as listed by Ginzburg [Rev. Mod. Phys. 76 (2004) 981]. To address this challenge, here we provide a simple solution based on a priori concept of Boltzmann thermal mixing among multiple parabolic potentials. The success and the impact of the present approach have been extensively demonstrated using a variety of materials, including Nb, YBa2Cu3O(7-x), Ca3Ru2O7, Ni, BiFeO3, and PbTiO3.

preprint2021arXiv

Theory and phase-field simulations on electrical control of spin cycloids in a multiferroic

Cycloidal spin orders are common in multiferroics. One of the prototypical examples is BiFeO3 (BFO) which shows a large polarization and a cycloidal antiferromagnetic order at room temperature. Here we employ Landau theory and phase-field simulations to analyze the coupled switching dynamics of polarization and cycloidal antiferromagnetic orders in BFO. We are able to identify 14 types of transitional spin structures between two cycloids and 9 electric-field-induced spin switching paths. We demonstrate the electric-field-induced rotation of wave vectors of the cycloidal spins and discover 2 types of cycloidal spin switching dynamics: fast local spin flips and slow rotation of wave vectors. Also, we construct road maps to achieve the switching between any two spin cycloids through multi-step applications of electric fields. The work provides a theoretical framework for the phenomenological description of spin cycloids and a fundamental understanding of the switching mechanisms to achieve electrical control of magnetic orders.

preprint2020arXiv

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103 S/m is observed in certain BiFeO3 DWs, which is about 100,000 times greater than the carrier-induced dc conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the ac conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for RF applications.