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Tian Feng

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Published work

2 published item(s)

preprint2022arXiv

Premise-based Multimodal Reasoning: Conditional Inference on Joint Textual and Visual Clues

It is a common practice for recent works in vision language cross-modal reasoning to adopt a binary or multi-choice classification formulation taking as input a set of source image(s) and textual query. In this work, we take a sober look at such an unconditional formulation in the sense that no prior knowledge is specified with respect to the source image(s). Inspired by the designs of both visual commonsense reasoning and natural language inference tasks, we propose a new task termed Premise-based Multi-modal Reasoning(PMR) where a textual premise is the background presumption on each source image. The PMR dataset contains 15,360 manually annotated samples which are created by a multi-phase crowd-sourcing process. With selected high-quality movie screenshots and human-curated premise templates from 6 pre-defined categories, we ask crowd-source workers to write one true hypothesis and three distractors (4 choices) given the premise and image through a cross-check procedure. Besides, we generate adversarial samples to alleviate the annotation artifacts and double the size of PMR. We benchmark various state-of-the-art (pretrained) multi-modal inference models on PMR and conduct comprehensive experimental analyses to showcase the utility of our dataset.

preprint2011arXiv

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi2Se3 and Si substrate, as verified by RHEED (Reflection High Energy Electron Diffraction), TEM (Transmission Electron Microscopy) and XRD (X-Ray Diffraction). The lattice constant of Bi2Se3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film down to the first quintuple layer without any second phase or an amorphous layer.