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Thuc-Quyen Nguyen

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cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall

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preprint2022arXiv

Universal and Efficient p-Doping of Organic Semiconductors by Electrophilic Attack of Cations

Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to a small number of OSCs, seriously limiting their general application. Herein, we reveal a novel p-doping mechanism by investigating the interactions between the dopant trityl cation and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of alkylated ions that induce electron transfer from neighboring P3HT chains, resulting in p-doping. This unique p-doping mechanism can be employed to dope various OSCs including those with high ionization energy (IE=5.8 eV). Moreover, this doping mechanism endows trityl cation with strong doping ability, leading to polaron yielding efficiency of 100 % and doping efficiency of over 80 % in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities towards highly efficient doping of OSCs.

preprint2020arXiv

Transient Grating Spectroscopy of Photocarrier Dynamics in Semiconducting Polymer Thin Films

While charge carrier dynamics and thermal management are both keys to the operational efficiency and stability for energy-related devices, experimental techniques that can simultaneously characterize both properties are still lacking. In this paper, we use laser-induced transient grating (TG) spectroscopy to characterize thin films of the archetypal organic semiconductor regioregular poly(3-hexylthiophene) (P3HT) and its blends with the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) on glass substrates. While the thermal response is determined to be dominated by the substrates, we show that the recombination dynamics of photocarriers in the organic semiconductor thin films occur on a similar timescale and can be separated from the thermal response. Our measurements indicate that the photocarrier dynamics are determined by multiple recombination processes and our extracted recombination rates are in good agreement with previous reports using other techniques. We further apply TG spectroscopy to characterize another conjugated polymer and a molecular fluorescent material to demonstrate its general applicability. Our study indicates the potential of transient grating spectroscopy to simultaneously characterize thermal transport and photocarrier dynamics in organic optoelectronic devices.

preprint2016arXiv

Charge Carrier Concentration Dependence of Encounter-Limited Bimolecular Recombination in Phase-Separated Organic Semiconductor Blends

Understanding how the complex intermolecular- and nano-structure present in organic semiconductor donor-acceptor blends impacts charge carrier motion, interactions, and recombination behavior is a critical fundamental issue with a particularly major impact on organic photovoltaic applications. In this study, kinetic Monte Carlo (KMC) simulations are used to numerically quantify the complex bimolecular charge carrier recombination behavior in idealized phase-separated blends. Recent KMC simulations have identified how the encounter-limited bimolecular recombination rate in these blends deviates from the often used Langevin model and have been used to construct the new power mean mobility model. Here, we make a challenging but crucial expansion to this work by determining the charge carrier concentration dependence of the encounter-limited bimolecular recombination coefficient. In doing so, we find that an accurate treatment of the long-range electrostatic interactions between charge carriers is critical, and we further argue that many previous KMC simulation studies have used a Coulomb cutoff radius that is too small, which causes a significant overestimation of the recombination rate. To shed more light on this issue, we determine the minimum cutoff radius required to reach an accuracy of less than $\pm10\%$ as a function of the domain size and the charge carrier concentration and then use this knowledge to accurately quantify the charge carrier concentration dependence of the recombination rate. Using these rigorous methods, we finally show that the parameters of the power mean mobility model are determined by a newly identified dimensionless ratio of the domain size to the average charge carrier separation distance.