Researcher profile

Thomas Schenkel

Thomas Schenkel contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Collective Effects and Intense Beam-Plasma Interactions in Ion-Beam-Driven High Energy Density Matter and Inertial Fusion Energy

For the successful generation of ion-beam-driven high energy density matter and heavy ion fusion energy, intense ion beams must be transported and focused onto a target with small spot size. One of the successful approaches to achieve this goal is to accelerate and transport intense ion charge bunches in an accelerator and then focus the charge bunches ballistically in a section of the accelerator that contains a neutralizing background plasma. This requires the ability to control space-charge effects during un-neutralized (non-neutral) beam transport in the accelerator and transport sections, and the ability to effectively neutralize the space charge and current by propagating the beam through background plasma. As the beam intensity and energy are increased in future heavy ion fusion (HIF) drivers and Fast Ignition (FI) approaches, it is expected that nonlinear processes and collective effects will become much more pronounced than in previous experiments. Making use of 3D electromagnetic particle-in-cell simulation (PIC) codes (BEST, WARP-X, and LTP-PIC, etc.), the theory and modelling studies will be validated by comparing with experimental data on the 100kV Princeton Advanced Test Stand, and future experiments at the FAIR facility. The theoretical predictions that are developed will be scaled to the beam and plasma parameters relevant to heavy ion fusion drivers and Fast Ignition scenarios. Therefore, the theoretical results will also contribute significantly toward the long-term goal of fusion energy production by ion-beam-driven inertial confinement fusion.

preprint2022arXiv

Defect engineering of silicon with ion pulses from laser acceleration

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.

preprint2021arXiv

Detecting spins with a microwave photon counter

Quantum emitters respond to resonant illumination by radiating electromagnetic fields. A component of these fields is phase-coherent with the driving tone, while another one is incoherent, consisting of spontaneously emitted photons and forming the fluorescence signal. Atoms and molecules are routinely detected by their fluorescence at optical frequencies, with important applications in quantum technology and microscopy. Spins, on the other hand, are usually detected by {their coherent response} at radio- or microwave frequencies, either in continuous-wave or pulsed magnetic resonance. Indeed, fluorescence detection of spins is hampered {by their low spontaneous emission rate} and by the lack of single-photon detectors in this frequency range. Here, using superconducting quantum devices, we demonstrate the detection of a small ensemble of donor spins in silicon by their fluorescence at microwave frequency and millikelvin temperatures. We enhance the spin radiative decay rate by coupling them to a high-quality-factor and small-mode-volume superconducting resonator, and we connect the device output to a newly-developed microwave single-photon counter based on a superconducting qubit. We discuss the potential of fluorescence detection as a novel method for magnetic resonance spectroscopy of small numbers of spins.

preprint2021arXiv

Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30 micrometer long percolation chains.

preprint2020arXiv

Electron Spin Resonance spectroscopy with femtoliter detection volume

We report electron spin resonance measurements of donors in silicon at millikelvin temperatures using a superconducting $LC$ planar micro-resonator and a Josephson Parametric Amplifier. The resonator includes a nanowire inductor, defining a femtoliter detection volume. Due to strain in the substrate, the donor resonance lines are heavily broadened. Single-spin to photon coupling strengths up to $\sim 3~\text{kHz}$ are observed. The single shot sensitivity is $120 \pm 24~$spins/Hahn echo, corresponding to $\approx 12 \pm 3$~spins$/\sqrt{\text{Hz}}$ for repeated acquisition.

preprint2019arXiv

Ion Acceleration in Laser Generated Mega Tesla Magnetic Vortex

Magnetic Vortex Acceleration (MVA) from near critical density targets is one of the promising schemes of laser-driven ion acceleration. 3D particle-in-cell simulations are used to explore a more extensive laser-target parameter space than previously reported on in the literature as well as to study the laser pulse coupling to the target, the structure of the fields, and the properties of the accelerated ion beam in the MVA scheme. The efficiency of acceleration depends on the coupling of the laser energy to the self-generated channel in the target. The accelerated proton beams demonstrate high level of collimation with achromatic angular divergence, and carry a significant amount of charge. For PW-class lasers, this acceleration regime provides favorable scaling of maximum ion energy with laser power for optimized interaction parameters. The mega Tesla-level magnetic fields generated by the laser-driven co-axial plasma structure in the target are prerequisite for accelerating protons to the energy of several hundred MeV.