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Thomas M. Hazard

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cond-mat.mes-hall quant-ph

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preprint2022arXiv

Extensible circuit-QED architecture via amplitude- and frequency-variable microwaves

We introduce a circuit-QED architecture combining fixed-frequency qubits and microwave-driven couplers. In the appropriate frame, the drive parameters appear as tunable knobs enabling selective two-qubit coupling and coherent-error suppression. We moreover introduce a set of controlled-phase gates based on drive-amplitude and drive-frequency modulation. We develop a theoretical framework based on Floquet theory to model microwave-activated interactions with time-dependent drive parameters, which we also use for pulse shaping. We perform numerical simulations of the gate fidelity for realistic circuit parameters, and discuss the impact of drive-induced decoherence. We estimate average gate fidelities beyond $99.9\%$ for all-microwave controlled-phase operations with gate times in the range $50-120\,\mathrm{ns}$. These two-qubit gates can operate over a large drive-frequency bandwidth and in a broad range of circuit parameters, thereby improving extensibility. We address the frequency allocation problem for this architecture using perturbation theory, demonstrating that qubit, coupler and drive frequencies can be chosen such that undesired static and driven interactions remain bounded in a multi-qubit device. Our numerical methods are useful for describing the time-evolution of driven systems in the adiabatic limit, and are applicable to a wide variety of circuit-QED setups.

preprint2019arXiv

Experimental realization of an intrinsically error-protected superconducting qubit

Encoding a qubit in logical quantum states with wavefunctions characterized by disjoint support and robust energies can offer simultaneous protection against relaxation and pure dephasing. Using a circuit-quantum-electrodynamics architecture, we experimentally realize a superconducting $0-π$ qubit, which hosts protected states suitable for quantum-information processing. Multi-tone spectroscopy measurements reveal the energy level structure of the system, which can be precisely described by a simple two-mode Hamiltonian. We find that the parity symmetry of the qubit results in charge-insensitive levels connecting the protected states, allowing for logical operations. The measured relaxation (1.6 ms) and dephasing times (25 $μ$s) demonstrate that our implementation of the $0-π$ circuit not only broadens the family of superconducting qubits, but also represents a promising candidate for the building block of a fault-tolerant quantum processor.

preprint2014arXiv

Undoped accumulation-mode Si/SiGe quantum dots

We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.

preprint2011arXiv

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.