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Researcher profile

Thomas Kanne

Thomas Kanne contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Electronic transport in double-nanowire superconducting islands with multiple terminals

We characterize in-situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends are consistent with a sub-gap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals and free of quasiparticle poisoning, these nanowires show promise for the implementation of several proposals that rely on parallel nanowire platforms.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Parallel InAs nanowires for Cooper pair splitters with Coulomb repulsion

Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional channels being close by, these novel platforms can be utilized to spatially separate entangled pairs of electrons by using quantum dots (QD) in the so-called Cooper pair splitting (CPS) process. The minimized distance between the QDs overcomes the limitations of single-wire-based geometries and can boost the splitting efficiency. Here we investigate CPS in such a device, for the first time, where strong inter-dot Coulomb repulsion is also present and studied thoroughly. We analyze theoretically the slight reduction of the CPS efficiency imposed by the Coulomb interaction and compare it to the experiments. Despite the competition between crossed Andreev reflection (CAR) and inter-wire capacitance, a significant CPS signal is observed indicating the dominance of the superconducting coupling. Our results demonstrate that the application of parallel InAs nanowires with epitaxial SC is a promising route for the realization of parafermionic states relying on enhanced CAR between the wires.

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preprint2020arXiv

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor devices

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preprint2020arXiv

Temperature Induced Shifts of Yu-Shiba-Rusinov Resonances in Nanowire-Based Hybrid Quantum Dots

The strong coupling of a superconductor to a spinful quantum dot results in Yu-Shiba-Rusinov (YSR) discrete subgap excitations. In isolation and at zero temperature, the excitations are $δ$ resonances. In transport experiments, however, they show as broad differential conductance peaks. We obtain the lineshape of the peaks and their temperature dependence in superconductor-quantum-dot-metal (S-QD-N) nanowire-based devices. Unexpectedly, we find that the peaks shift in energy with temperature, with the shift magnitude and sign depending on ground state parity and bias voltage. Additionally, we empirically find a power-law scaling of the peak area versus temperature. These observations are not explained by current models.

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