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Thierry Grenet

Thierry Grenet appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.dis-nncond-mat.mtrl-scicond-mat.mes-hall

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Published work

12 published item(s)

preprint2022arXiv

Electron glass signatures up to room temperature in disordered insulators

This paper describes the observation of non-equilibrium field effects at room temperature in four disordered insulating systems: granular Al, discontinuous Au, amorphous NbSi and amorphous InOx thin films. The use of wide enough gate voltage ranges and a cautious analysis of the data allow us to uncover memory dips, the advocated hallmark of the electron glass, in the four systems. These memory dips are found to relax slowly over days of measurements under gate voltage changes, reflecting the impossibility for the systems to reach an equilibrium state within experimentally accessible times. Our findings demonstrate that these electrical glassy effects, so far essentially reported at cryogenic temperatures, actually extend up to room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate voltage control of the $AlO_x$/$SrTiO_3$ interface electrical properties

Electron-beam deposition of an insulating granular aluminium or of an off-stoichiometric amorphous alumina layer on a $SrTiO_3$ surface is a simple way to get a metallic interface from insulating materials. No heating nor specific preparation of the $SrTiO_3$ surface are needed. In this paper, we investigate how the electrical properties of this interface can be tuned by the use of a back gate voltage (electrical field through the $SrTiO_3$ substrate). We demonstrate that the slow field-effect observed at room temperature can be used to tune reversibly and in a controlled way the low temperature electrical properties of the interface. In particular, important parameters of a transistor such as the amplitude of the resistance response to gate voltage changes or the existence of an "on" or an "off" state at zero gate voltage and at low temperature can be adjusted in a single sample. This method should be applicable to any $SrTiO_3$-based interface in which oxygen vacancies are involved and might provide a powerful way to study the metal or superconductor insulator transition observed in such systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films

We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ageing and relaxation times in disordered insulators

We focus on the slow relaxations observed in the conductance of disordered insulators at low temperature (especially granular aluminum films). They manifest themselves as a temporal logarithmic decrease of the conductance after a quench from high temperatures and the concomitant appearance of a field effect anomaly centered on the gate voltage maintained. We are first interested in ageing effects, i.e. the age dependence of the dynamical properties of the system. We stress that the formation of a second field effect anomaly at a different gate voltage is not a "history free" logarithmic (lnt) process, but departs from lnt in a way which encodes the system's age. The apparent relaxation time distribution extracted from the observed relaxations is thus not "constant" but evolves with time. We discuss what defines the age of the system and what external perturbation out of equilibrium does or does not rejuvenate it. We further discuss the problem of relaxation times and comment on the commonly used "two dip" experimental protocol aimed at extracting "characteristic times" for the glassy systems (granular aluminum, doped indium oxide...). We show that it is inoperable for systems like granular Al and probably highly doped InOx where it provides a trivial value only determined by the experimental protocol. But in cases where different values are obtained like in lightly doped InOx or some ultra thin metal films, potentially interesting information can be obtained, possibly about the "short time" dynamics of the different systems. Present ideas about the effect of doping on the glassiness of disordered insulators may also have to be reconsidered.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ageing in granular aluminium insulating thin films

We present a new set of electrical field effect measurements on granular aluminium insulating thin films. We have explored how the conductance relaxations induced by gate voltage changes depend on the age of the system, namely the time elapsed since its quench at low temperature. A clear age dependence of the relaxations is seen, qualitatively similar to ageing effects seen in other well studied glassy systems such as spin glasses or polymers. We explain how our results differ from the previous ones obtained with different protocols in indium oxide and granular aluminium thin films. Our experimental findings bring new information on the dynamics of the system and put new constraints on the theoretical models that may explain slow conductance relaxations in disordered insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Determination of characteristic relaxation times and their significance in glassy disordered insulators

We revisit the field effect procedure used to characterise the slow dynamics of glassy Anderson insulators. It is shown that in the slowest systems the procedure fails and the "characteristic" time values extracted are not intrinsic but determined by the experimental procedure itself. In other cases (like lightly doped indium oxide) qualitative indications about the dynamics might be obtained, however the times extracted cannot be seen as characteristic relaxation times of the system in any simple manner, and more complete experiments are necessary. Implications regarding the effect of carrier concentration on the emergence of glassiness are briefly outlined.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical glassy behavior in granular aluminium thin films

We present new results obtained by field effect measurements on insulating granular Al thin films. First, reproducible and stable conductance fluctuations are seen in micron size samples as a function of gate voltage. The anomalous field effect and its slow relaxation already known to exist in macroscopic samples are shown to still exist in small samples and to have no influence on the fluctuations pattern. Secondly, "true" aging is demonstrated, i.e. the anomalous field effect relaxation depends on the time elapsed since the cooling, the longer this time the longer it takes for the system to react to a gate voltage change. Interpretations and implications of these findings are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Screening and conductance relaxations in insulating granular aluminium thin films

We have recently found in insulating granular Al thin film a new experimental feature (Delahaye et al., Phys. Rev. Lett. 106, 186602, 2011), namely the existence of a conductance relaxation that is not sensitive to gate voltage changes. This conductance relaxation is related to the existence of a metallic-like screening in the film and can be used to estimate its characteristic length scale. In the present paper, we give some experimental details on how this feature was measured and present our first results on the screening length temperature dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Symmetrical field effect and slow electron relaxation in granular aluminium

Conductivity and field effect measurements in thin insulating Al granular films are reported. The occurrence of a symmetrical field effect and of very slow conductance relaxations is demonstrated. They are identical to the electron glassy behaviours already reported in insulating indium oxide thin films. The results suggest that the phenomena are quite general. The study of structurally discontinuous samples should help to understand the origin and mechanism of the glassy behaviour.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Slow Conductance Relaxation in Insulating Granular Al: Evidence for Screening Effects

It is shown that the conductance relaxations observed in electrical field effect measurements on granular Al films are the sum of two contributions. One is sensitive to gate voltage changes and gives the already reported anomalous electrical field effect. The other one is independent of the gate voltage history and starts when the films are cooled down to low temperature. Their relative amplitude is strongly thickness dependent which demonstrates the existence of a finite screening length in our insulating films and allows its quantitative estimate (about 10nm at 4K). This metallic-like screening should be taken into account in the electron glass models of disordered insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Manifestation of ageing in the low temperature conductance of disordered insulators

We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy state. It is the fact that the dynamical properties of a glass depend on its age, i.e. on the time elapsed since it was quench-cooled. We first critically analyse previous studies on disordered insulators and question their interpretation in terms of ageing. We then present new measurements on insulating granular aluminium thin films which demonstrate that the dynamics is indeed age dependent. We also show that the results of different relaxation protocols are related by a superposition principle. The implications of our findings for the mechanism of the conductance slow relaxations are then discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Anomalous field effect and glassy behaviour in granular aluminium thin films: electron glass?

We present a study of non-equilibrium phenomena observed in the electrical conductance of insulating granular aluminium thin films. An anomalous field effect and its slow relaxation are studied in some detail. The phenomenology is very similar to the one already observed in indium oxide. The origin of the phenomena is discussed. In granular systems, the present experiments can naturally be interpreted along two different lines. One relies on a slow polarisation in the dielectric surrounding the metallic islands. The other one relies on a purely electronic mechanism: the formation of an electron Coulomb glass in the granular metal. More selective experiments and/or quantitative predictions about the Coulomb glass properties are still needed to definitely distinguish between the two scenarii.

0 citations0 reviewsNo code linkedOpen access