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Tharangattu N. Narayanan

Tharangattu N. Narayanan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Photo-Rechargeable Li Ion Batteries using TiS2 Cathode

Photo-rechargeable (solar) battery can be considered as an energy harvesting cum storage system, where it can charge the conventional metal-ion battery using light instead of electricity, without having other parasitic reactions. Here we demonstrate a two-electrode lithium ion solar battery with multifaceted TiS2-TiO2 hybrid sheets as cathode. Choice of TiS2-TiO2 electrode ensures the formation of a type II semiconductor heterostructure while the lateral heterostructure geometry ensures high mass/charge transfer and light interactions with the electrode. TiS2 has a higher lithium binding energy (1.6 eV) than TiO2 (1.03 eV), ensuring the possibilities of higher amount of Li ion insertion to TiS2 and hence the maximum recovery with the photocharging, as further confirmed by the experiments. Apart from the demonstration of solar solid-state batteries, the charging of lithium ion full cell with light indicates the formation of lithium intercalated graphite compounds, ensuring the charging of the battery without any other parasitic reactions at the electrolyte or electrode-electrolyte interfaces. Possible mechanisms proposed here for the charging and discharging processes of solar batteries, based on our experimental and theoretical results, indicate the potential of such systems in forthcoming era of renewable energies.

preprint2022arXiv

On the Existence of Photoluminescence and Room-Temperature Spin Polarization in Ambipolar V doped MoS$_2$ Monolayers

Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $σ^+$ and $σ^-$ of light excitation). A large V doping causes semiconductor to metal transition in MoS$_2$ but with medium level causing the existence of photoluminescence with high spin polarization. The ambipolar nature of medium level V doped MoS$_2$ is shown here indicating its potential as an opto-electronic material. The presence of V-dopants and their different level of content are proven by both spectroscopic and microscopic methods.A detailed temperature and power dependent photoluminescence studies along with density functional theory-based calculations in support unravels the emergence of the co-existence of spin-valley coupling and photoluminescence. This study shows the potential of doping MoS$_2$ for deriving new materials for next generation room temperature opto-spintronics.