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Thaneshwor P. Kaloni

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Published work

4 published item(s)

preprint2020arXiv

Site dependency of the magnetism for Mn adsorption on MgO/Ag(001): a combined DFT$+U$ and STM investigation

Theoretical and experimental investigation of the electronic and magnetic structure of transition metal atoms on an insulating interface with a metallic substrate at low temperatures is quite challenging. In this paper, we show a density functional theory plus Hubbard $U$ based protocol to study an Mn adatom on three symmetrically allowed absorption sites, namely on O, hollow (between two Mg and two O) and on Mg on MgO(001). We added a thick enough(bulk-like) metallic Ag slab beneath MgO for faithful replication of scanning tunneling microscopy (STM) experiments. Our study reveals that to determine the stable most binding site, we need to obtain a Hubbard $U$ value from the density functional theory(DFT) calculations, and our results show agreement with STM experiments. Our calculated Hubbard $U$ values for the three adatom sites are different. When Mn sits on O, it retains 2.4 $μ_B$ spin moment, close to its atomic spin moment. However, when Mn sits on other adatom sites, the spin moment decreases. Using the atom projected density of states, we find Mn on O atom shows very narrow crystal field splitting among \textit{d} orbitals, whereas on other adatom sites Mn \textit{d} orbitals show significant splitting. We calculate charge and spin densities and show vertical and horizontal propagation of charge and spin density varies widely between sites. Mn on Mg top shows an unusual feature, that Mn pushes Mg below, to make a coplanar of Mn geometry with the four oxygen atoms. In addition, we explained the reason for spin leaking down to the Ag layers. Mn on MgO/Ag does not show any spin-flip behavior in the STM, an unusual phenomenon, and we used our first principles-based approach to explain this unique observation.

preprint2016arXiv

Materials properties of out-of-plane heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$

Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors, respectively. However, a direct band gap in the WS$_2$-MoSe$_2$ heterostructure can be achieved by applying compressive strain. Furthermore, the excitoni c peaks in both monolayer and bilayer heterostructures are calculated to understand the optical behavior of these systems. The suppression of the optical spectrum with respect to the c orresponding monolayers is due to interlayer charge transfer. The stability of the systems under study is confirmed by performing phonon spectrum calculations.

preprint2015arXiv

Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach

First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric field in combination with spin-orbit coupling. Tight-binding calculations based on four orbitals per atom and an effective single orbital are presented to match with the results obtained from first-principles calculations. In particular, the electronic band structure and the band splitting are investigated with both models. Moreover, the simple $k\cdot p$ model is also considered in order to understand the band splitting in the presence of an external electric field and spin-orbit coupling. A large splitting is obtained, which is expected to be useful for spintronic devices. The fair agreement between the first-principle, $k\cdot p$ model, and tight-binding approaches leads to a table of parameters for future tight-binding studies on hexagonal 2-D nanostructures. By using the tight binding parameters, the transport properties of typical 0-D triangular quantum dots between two semi-infinite electrodes in the presence of spin-orbit coupling are addressed.

preprint2014arXiv

Large Enhancement and Tunable Band Gap in Silicene by Small Organic Molecule Adsorption

Adsorption of eight organic molecules (acetone, acetonitrile, ammonia, benzene, methane, methanol, ethanol, and toluene) onto silicene has been investigated using van der Waals density functional theory calculations (DFT-D). The calculated values of the adsorption energies vary from $-0.11$ eV to $-0.95$ eV. Quantitatively, these values are higher than the corresponding adsorption energies of the molecules adsorbed on graphene. In addition, electronic structure calculations have been performed. The obtained values of the band gap range from 0.006 eV to 0.35 eV for acetonitrile to acetone, respectively. Furthermore, the effective mass of the electron is estimated and found to be comparatively small, which is expected to result in high electron mobility. In addition, we study the effect of Li atoms doped in pristine and acetone adsorbed silicene. In particular, we focus on the variation of the adsorption energy with respect to the number of Li atoms in the systems. Our results suggest new approaches for the use of silicene molecular-based energy storage and conversion as well as electronic devices.