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Teng Gao

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Published work

4 published item(s)

preprint2016arXiv

Effect of Wigner energy on the symmetry energy coefficient in nuclei

The nuclear symmetry energy coefficient (including the coefficient $a_{\rm sym}^{(4)}$ of $I^{4}$ term) of finite nuclei is extracted by using the differences of available experimental binding energies of isobaric nuclei. It is found that the extracted symmetry energy coefficient $a^{*}_{\rm sym}(A,I)$ decreases with increasing of isospin asymmetry $I$, which is mainly caused by Wigner correction, since $e^{*}_{\rm sym}$ is the summation of the traditional symmetry energy $e_{\rm sym}$ and the Wigner energy $e_{\rm W}$. We obtain the optimal values $J=30.25\pm0.10$ MeV, $a_{\rm ss}=56.18\pm1.25$ MeV, $a_{\rm sym}^{(4)}=8.33\pm1.21$ MeV and the Wigner parameter $x=2.38\pm0.12$ through the polynomial fit to 2240 measured binding energies for nuclei with $20 \leq A \leq 261$ with an rms deviation of 23.42 keV. We also find that the volume symmetry coefficient $J\simeq 30$ MeV is insensitive to the value $x$, whereas the surface symmetry coefficient $a_{\rm ss}$ and the coefficient $a_{\rm sym}^{(4)}$ are very sensitive to the value of $x$ in the range $1\leq x\leq 4$. The contribution of $a_{\rm sym}^{(4)}$ term increases rapidly with increasing of isospin asymmetry $I$. For very neutron-rich nuclei, the contribution of $a_{\rm sym}^{(4)}$ term will play an important role.

preprint2015arXiv

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space with this facile and unique approach enables the drastic decrease of nucleation centers together with the effective suppression of hydrogen etching reaction. It is revealed, for the first time, that the orientations of as-grown h-BN monolayers are strongly correlated with the crystalline facets of growth substrates, with the Cu (111) being the best substrate for growing high-quality single crystalline h-BN monolayer, consistent with the density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films and deepens the fundamental understanding of h-BN growth process.

preprint2014arXiv

Directly grown monolayer MoS2 on Au foils as efficient hydrogen evolution catalysts

Synthesis of monolayer MoS2 is essential for fulfilling the potential of MoS2 in catalysis, optoelectronics and valleytronics, etc. Herein, we report for the first time the scalable growth of high quality, domain size tunable (edge length from ~ 200 nm to 50 μm), strictly monolayer MoS2 on commercially available Au foils, via a low pressure chemical vapor deposition method. The nanosized triangular MoS2 flakes on Au foils was proved to be an excellent electrocatalyst for hydrogen evolution reaction (HER), featured by a rather low Tafel slope (61 mV/decade) and a supreme exchange current density (38.1 μA/cm2). The abundant active edge sites and the excellent electron coupling between MoS2 and Au foils account for the extraordinary HER activity. Our work presents a sound proof that strictly monolayer MoS2 assembled on a well selected electrode can manifest comparable or even superior HER property than that of nanoparticles or few-layer MoS2 electrocatalyst.

preprint2014arXiv

Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a chiral boundary

Monolayer lateral heterostructure of graphene and hexagonal boron nitride (h-BNC) has attracted a growing attention mainly due to its tunable band-gap character and unique physical properties at interface. Hereby, we reported the first-time synthesis of a nearly freestanding h-BNC hybrid on a weakly coupled substrate of Ir (111), where graphene and h-BN possessing different surface heights and corrugations formed a perfect monolayer hybrid. With the aid of scanning tunneling microscopy/spectroscopy (STM/STS), we demonstrated that h-BN can patch alongside the boundary of pre-deposited graphene domains and vice versa to form a seamless monolayer hybrid, with the realization of predominant zigzag type chiral boundaries at the interface. Density-functional theory calculations and STM/STS measurements aided us to reveal that this interface between graphene and h-BN were atomically sharp in aspects of the chemical bonding as well as the local electronic property from both theoretical and experimental points of view.