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Takeshi Kasama

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cond-mat.mtrl-sci

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preprint2015arXiv

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

preprint2013arXiv

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

preprint2011arXiv

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate (400C) and high temperature (560 and 630C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1 and 2%, grown by molecular beam epitaxy at 270oC. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn,Ga)As nanocrystals, with similar diameters of 7 - 10 nm are observed to coexist in layers with an initial Mn content of 0.5% after higher temperature annealing. Measurements of magnetization relaxation in the time span 0.1 - 10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.