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Takamoto Yokosawa

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2026arXiv

Unconventional thermal conductivity of suspended zigzag graphene nanomesh

Compared to the study of graphene itself, the study of nano-structured graphene is rather limited because it is difficult to prepare atomically ordered edges. In this study, we have fabricated a periodically patterned mesh structure of graphene with atomically precise zigzag edges (zGNM: zigzag graphene nanomesh) and studied its thermal conductivity ($κ$) by opto-thermal Raman measurement. Unintuitively, it is found that the $κ$ of zGNM of 2,3 monolayers (MLs) thick is inversely proportional to the nanoribbon width ($W$), while that of zGNM of 5$\sim$10 MLs thick is independent of $W$ down to 30 nm. Since the $κ$ of suspended zigzag graphene nanoribbons (zGNRs) is suppressed by decreasing $W$, this nonclassical behavior of zGNM is due to the mesh structure. In addition, zGNRs show a higher $κ$ than GNRs with atomically rough edges. This is probably due to the atomically ordered zigzag edges.

preprint2022arXiv

Nanoscale Fabrication of Graphene by Hydrogen-Plasma Etching

Graphene is attracting vast interest due to its superior electronic and mechanical properties. However, structure and electronic properties of its edge are often neglected, although they are important for nanoscale devices because the edge ratio becomes larger by decreasing the device size. In this study, we suggest a way to fabricate a graphene with atomically aligned zigzag edges by applying hydrogen-plasma etching (HPE) technique. By patterning a graphene prior to HPE, it is succeeded to shape a graphene in desired structure. Both atomic force microscopy and Raman spectroscopy confirm that the graphene shaped by this technique preserves its honeycomb structure even on the edge, which is aligned with zigzag structure. Although the mechanism of the anisotropic etching by hydrogen-plasma have not been clarified yet, the sample position dependence of the etching rate suggests that the hydrogen-radicals are responsible for the anisotropic etching.