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Takamasa Hirai

Takamasa Hirai contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2024arXiv

Designing flexible hard magnetic materials for zero-magnetic-field operation of the anomalous Nernst effect

The global shift towards a carbon-neutral society has accelerated the demand for green energy, driving research into efficient technologies for harvesting energy from low-grade waste heat. Recently, transverse thermoelectrics based on the anomalous Nernst effect (ANE) has gained attention due to their simple device structure, scalability, and manufacturing-friendly nature. While topological single crystals and epitaxial films have been focused for enhancing the ANE-driven thermoelectric performance, further improvements in material design are necessary for practical applications. Here, we report an easy-to-implement strategy for designing mechanically flexible and magnetically hard transverse thermoelectric materials by creating amorphous-crystalline heterogeneous composites. We fabricated and optimized the heterogeneous composites through controlled heat treatment, achieving significant enhancements in the coercivity and anomalous Nernst coefficient, while maintaining flexibility. Additionally, using the developed material, we constructed a single-material-based coiled device and demonstrated the zero-field operation of the ANE-based energy harvesting from curved heat sources. These results validate the feasibility of using the ANE-based flexible materials for energy harvesting applications.

preprint2022arXiv

Anomalous Ettingshausen effect in iron-carbon alloys

We have investigated the anomalous Ettingshausen effect (AEE) in iron-carbon alloys, i.e., cast irons and steel, using the lock-in thermography. All the alloys exhibit the clear AEE-induced temperature modulation, and their anomalous Ettingshausen coefficient is an order of magnitude greater than that of the pure iron at room temperature. The dimensionless figure of merit for AEE in the ductile cast iron is 55 times greater than that in the pure iron owing to the significant increase of the anomalous Ettingshausen coefficient. Our result reveals a potential of iron-carbon alloys as transverse thermoelectric materials, although the composition and microstructures optimizations are necessary.

preprint2022arXiv

Deposition temperature dependence of thermo-spin and magneto-thermoelectric conversion in Co$_2$MnGa films on Y$_3$Fe$_5$O$_{12}$ and Gd$_3$Ga$_5$O$_{12}$

We have characterized Co$_2$MnGa (CMG) Heusler alloy films grown on Y$_3$Fe$_5$O$_{12}$ (YIG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates at different deposition temperatures and investigated thermo-spin and magneto-thermoelectric conversion properties by means of a lock-in thermography technique. X-ray diffraction, magnetization, and electrical transport measurements show that the deposition at high substrate temperatures induces the crystallized structures of CMG while the resistivity of the CMG films on YIG (GGG) prepared at and above 500 °C (550 °C) becomes too high to measure the thermo-spin and magneto-thermoelectric effects due to large roughness, highlighting the difficulty of fabricating highly ordered continuous CMG films on garnet structures. Our lock-in thermography measurements show that the deposition at high substrate temperatures results in an increase in the current-induced temperature change for CMG/GGG and a decrease in that for CMG/YIG. The former indicates the enhancement of the anomalous Ettingshausen effect in CMG through crystallization. The latter can be explained by the superposition of the anomalous Ettingshausen effect and the spin Peltier effect induced by the positive (negative) charge-to-spin conversion for the amorphous (crystallized) CMG films. These results provide a hint to construct spin-caloritronic devices based on Heusler alloys.

preprint2022arXiv

Seebeck-driven transverse thermoelectric generation in on-chip devices

An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $μ$V K$^{-1}$ due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiO$_{x}$ layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.

preprint2020arXiv

Above-room-temperature giant thermal conductivity switching in spintronic multilayer

Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal conductivity depends on the magnetization configuration: this is the magneto-thermal resistance effect. Here we show that an epitaxial Cu/Co$_{50}$Fe$_{50}$ multilayer film exhibits giant magnetic-field-induced modulation of the cross-plane thermal conductivity. The magneto-thermal resistance ratio for the Cu/Co$_{50}$Fe$_{50}$ multilayer reaches 150% at room temperature, which is much larger than the previous record high. Although the ratio decreases with increasing the temperature, the giant magneto-thermal resistance effect of ~100% still appears up to 400 K. The magnetic field dependence of the thermal conductivity of the Cu/Co$_{50}$Fe$_{50}$ multilayer was observed to be about twice greater than that of the cross-plane electrical conductivity. The observation of the giant magneto-thermal resistance effect clarifies a potential of spintronic multilayers as thermal switching devices.

preprint2020arXiv

High-temperature dependence of anomalous Ettingshausen effect in SmCo$_5$-type permanent magnets

The anomalous Ettingshausen effect (AEE) in SmCo$_5$-type permanent magnets has been investigated in the high-temperature range from room temperature to around 600 K. The anomalous Ettingshausen coefficient of the SmCo$_5$ and (SmGd)Co$_5$ magnets monotonically increases with increasing the temperature and shows the similar temperature dependence, while the coefficient of SmCo$_5$ is slightly larger than that of (SmGd)Co$_5$ at high temperatures. The dimensionless figure of merit for AEE in SmCo$_5$ at high temperatures is much greater than the previous record obtained for the anomalous Nernst effect. The observed high-temperature behavior of AEE is discussed based on the first-principles calculations of transverse transport coefficients.