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T. Story

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Published work

11 published item(s)

preprint2020arXiv

Band structure and topological phases of Pb$_{1-x-y}$Sn$_x$Mn$_y$Te by ab initio calculations

The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin variables. Our first principles calculations show that the presence of Mn shifts the TCI and the Weyl region towards higher Sn contents in Pb$_{1-x}$Sn$_x$Te. When the Mn spin polarization is finite, the spin perturbation, like the orbital part, induces changes in band energies comparable to the band gap, which widens the Weyl area. The effect opens a possibility of driving transitions between various topological phases of the system by magnetic field or by the spontaneous Mn magnetization. We also propose a new method to calculate topological indices for systems with a finite spin polarization defined based on the concept of the Chern number. These valid topological characteristics enable an identification of the three distinct topological phases of the Pb$_{1-x-y}$Sn$_x$Mn$_y$Te alloy.

preprint2019arXiv

Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content

High quality p-type PbTe-CdTe monocrystalline alloys containing up to 10 at.$\%$ of Cd are obtained by self-selecting vapor transport method. Mid infrared photoluminescence experiments are performed to follow the variation of the fundamental energy gap as a function of Cd content. The Hall mobility, thermoelectric power, thermal conductivity and thermoelectric figure of merit parameter $ZT$ are investigated experimentally and theoretically paying particular attention to the two-valence band structure of the material. It is shown that the heavy-hole band near the $Σ$ point of the Brillouin zone plays an important role and is responsible for the Pb$_{1-x}$Cd$_x$Te hole transport at higher Cd-content. Our data and their description can serve as the standard for Pb$_{1-x}$Cd$_x$Te single crystals with $x$ up to 0.1. It is shown, that monocrystalline Pb$_{1-x}$Cd$_x$Te samples with relatively low Cd content of about 1 at.\% and hole concentration of the order of 10$^{20}$ cm$^{-3}$ may exhibit $ZT \approx$ 1.4 at 600 K.

preprint2015arXiv

DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor

Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.

preprint2015arXiv

Direct observation and temperature control of the surface Dirac gap in the topological crystalline insulator (Pb,Sn)Se

Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here, we show for the first time a temperature-driven gap opening in Dirac surface states within the TCI phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between a massless and massive topological state on the surface of a topological system.

preprint2015arXiv

Magnetic anisotropy energy in disordered Ge_{1-x}Mn_{x}Te

We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high concentration of cation vacancies. We calculate the effect of this structural and chemical disorder on single ion magnetic anisotropy mechanism and show that its contribution is order of magnitude smaller as compared to magnetic anisotropy mechanism originating from the spin polarization induced by Mn ions into neighboring Te and Ge ions. We also discuss magnetic anisotropy effects due to pairs of Mn ions differently allocated in the lattice. The spatial averaging over chemical disorder strongly reduces the strength of this magnetic anisotropy mechanism and restores the global rhombohedral symmetry of magnetic system.

preprint2015arXiv

Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

preprint2015arXiv

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe

The transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap $E_g$. The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap $E_g$ of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe $dc$ transport effects in the situation of extreme band's nonparabolicity which, to the best of our knowledge, has never been tried before. A situation is reached in which both two-dimensional bands (topological surface states) and three-dimensional bands are linear in electron \textbf{k} vector. Various scattering modes and their contribution to transport phenomena in Pb$_{1-x}$Sn$_x$Se are analyzed. As the energy gap goes through zero, some transport integrals have a singular (nonphysical) behaviour and we demonstrate how to deal with this problem by introducing damping.

preprint2014arXiv

On the nature of the band inversion and the topological phase transition in (Pb,Sn)Se

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition.

preprint2013arXiv

Observation of topological crystalline insulator surface states on (111)-oriented Pb$_{1-x}$Sn$_{x}$Se films

We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.

preprint2013arXiv

Topological crystalline insulator states in Pb(1-x)Sn(x)Se

Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.

preprint2012arXiv

Spin-polarized (001) surface states of the topological crystalline insulator Pb_{0.73}Sn_{0.27}Se

We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of these (001) surface states in Pb_{0.73}Sn_{0.27}Se, as well as for their chiral spin structure.