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In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength from 540 to 760 nm.
We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also present a microcavity based on (Cd,Zn,Mg)Te containing a (Cd,Zn)Te quantum well. Reflectivity spectra, photoluminescence in real space and in far field are presented.
We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1−xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1−xMnxAs. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1−xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1−xMnxAs and Ga1−xMnxAs. The different electronic structures are attributed to the weaker Mn 3d - As 4p hybridization in In1−xMnxAs than in Ga1−xMnxAs.
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