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T. Schumann

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2022arXiv

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.

preprint2019arXiv

Determination of the crystal field splitting energy in Cd3As2 using magnetooptics

Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy. By combining angular dependent cyclotron resonance with Landau level spectroscopy measurements in the Faraday geometry, we determine that δ is positive and equal to 15+/-5 meV in Cd3As2. Our results lead to a more accurate knowledge of the details of the band structure of this Dirac semimetal such as the position its Dirac nodes in momentum space and their splitting into Weyl nodes under a magnetic field.

preprint2015arXiv

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

preprint2009arXiv

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.