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Source author record

T. S. Sudarshan

T. S. Sudarshan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.chem-phphysics.plasm-phquant-ph

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Published work

5 published item(s)

preprint2012arXiv

Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy

We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular adsorbents on epitaxial graphene. Conductance changes are a trade-off between carrier concentration and scattering, and manifest at direct current and optical frequencies. We therefore investigate changes in the infrared (IR) reflection spectra to correlate these two frequency domains, as reflectance changes are due to a change of epitaxial graphene (EG) surface conductance. We match theory with experimental IR data and extract changes in carrier concentration and scattering due to gas adsorption. Finally, we separate the intraband and interband scattering contributions to the electronic transport under gas adsorption. The results indicate that, under gas adsorption, the influence of interband scattering cannot be neglected, even at DC.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Study of epitaxial graphene on non-polar 6H-SiC faces

We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack of a hexagonal template on the non-polar faces. Non-polar faces also exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with increasing temperature. This is attributed to decreasing stress with increasing temperature. These variations provide evidence of different EG growth mechanisms on non-polar and polar faces, likely due to differences in surface free energy. We also present differences between a-plane EG and m-plane EG in terms of morphology, thickness and Raman characteristics

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preprint2010arXiv

Doping Dependence of Thermal Oxidation on n-type 4H-SiC

The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a clear doping dependence. Samples with higher doping concentrations displayed higher oxidation rates. The results were interpreted using a modified Deal-Grove model. Linear and parabolic rate constants and activation energies were extracted. Increasing nitrogen led to an increase in linear rate constant pre-exponential factor from 10-6m/s to 10-2m/s and the parabolic rate constant pre-exponential factor from 10e9m2/s to 10e6m2/s. The increase in linear rate constant was attributed to defects from doping-induced lattice mismatch, which tend to be more reactive than bulk crystal regions. The increase in the diffusion-limited parabolic rate constant was attributed to degradation in oxide quality originating from the doping-induced lattice mismatch. This degradation was confirmed by the observation of a decrease in optical density of the grown oxide films from 1.4 to 1.24. The linear activation energy varied from 1.6eV to 2.8eV, while the parabolic activation energy varied from 2.7eV to 3.3eV, increasing with doping concentration. These increased activation energies were attributed to higher nitrogen content, leading to an increase in effective bond energy stemming from the difference in C-Si (2.82eV) and Si-N (4.26eV) binding energies. This work provides crucial information in the engineering of SiO2 dielectrics for SiC MOS structures, which typically involve regions of very different doping concentrations, and suggests that thermal oxidation at high doping concentrations in SiC may be defect mediated.

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preprint2010arXiv

Graphene to Graphane: Novel Electrochemical Conversion

A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown epitaxial graphene (EG) was used as starting material for graphane conversion. A home-built electrochemical cell with Pt wire and exposed graphene as the anode and cathode, respectively, was used to attract H+ ions to react with the exposed graphene. Cyclic voltammetry of the cell revealed the potential of the conversion reaction as well as oxidation and reduction peaks, suggesting the possibility of electrochemically reversible hydrogenation. A sharp increase in D peak in the Raman spectra of EG, increase of D/G ratio, introduction of a peak at ~2930 cm-1 and respective peak shifts as well as a sharp increase in resistance showed the successful hydrogenation of EG. This conversion was distinguished from lattice damage by thermal reversal back to graphene at 1000°C.

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preprint2010arXiv

Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses.

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