Source author record

T. S. Biswas

T. S. Biswas appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

4works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2015arXiv

Time-Resolved Mass Sensing of a Molecular Adsorbate Nonuniformly Distributed Along a Nanomechnical String

We show that the particular distribution of mass deposited on the surface of a nanomechanical resonator can be estimated by tracking the evolution of the device's resonance frequencies during the process of desorption. The technique, which relies on analytical models we have developed for the multimodal response of the system, enables mass sensing at much higher levels of accuracy than is typically achieved with a single frequency-shift measurement and no rigorous knowledge of the mass profile. We report on a series of demonstration experiments, in which the explosive molecule 1,3,5-trinitroperhydro-1,3,5-triazine (RDX) is vapor deposited along the length of a silicon nitride nanostring to create a dense, random covering of RDX crystallites on the surface. In some cases, the deposition is biased to produce distributions with a slight excess or deficit of mass at the string midpoint. The added mass is then allowed to sublimate away under vacuum conditions, with the device returning to its original state over about 4 h (and the resonance frequencies, measured via optical interferometry, relaxing back to their pre-mass-deposition values). Our claim is that the detailed time trace of observed frequency shifts is rich in information---not only about the quantity of RDX initially deposited but also about its spatial arrangement along the nanostring. The data also reveal that sublimation in this case follows a nontrivial rate law, consistent with mass loss occurring at the exposed surface area of the RDX crystallites.

preprint2012arXiv

Dissipation Mechanisms in Thermomechanically Driven Silicon Nitride Nanostrings

High-stress silicon nitride nanostrings are a promising system for sensing applications because of their ultra-high mechanical quality factors (Qs). By performing thermomechanical calibration across multiple vibrational modes, we are able to assess the roles of the various dissipation mechanisms in these devices. Specifically, we possess a set of nanostrings in which all measured modes fall upon a single curve of peak displacement versus frequency. This allows us to rule out bulk bending and intrinsic loss mechanisms as dominant sources of dissipation and to conclude that the most significant contribution to dissipation in high-stress nanostrings occurs at the anchor points.

preprint2012arXiv

High-Q Gold and Silicon Nitride Bilayer Nanostrings

Low-mass, high-Q, silicon nitride nanostrings are at the cutting edge of nanomechanical devices for sensing applications. Here we show that the addition of a chemically functionalizable gold overlayer does not adversely affect the Q of the fundamental out-of-plane mode. Instead the device retains its mechanical responsiveness while gaining sensitivity to molecular bonding. Furthermore, differences in thermal expansion within the bilayer give rise to internal stresses that can be electrically controlled. In particular, an alternating current excites resonant motion of the nanostring. This AC thermoelastic actuation is simple, robust, and provides an integrated approach to sensor actuation.

preprint2012arXiv

Microfluidic and Nanofluidic Cavities for Quantum Fluids Experiments

The union of quantum fluids research with nanoscience is rich with opportunities for new physics. The relevant length scales in quantum fluids, 3He in particular, are comparable to those possible using microfluidic and nanofluidic devices. In this article, we will briefly review how the physics of quantum fluids depends strongly on confinement on the microscale and nanoscale. Then we present devices fabricated specifically for quantum fluids research, with cavity sizes ranging from 30 nm to 11 microns deep, and the characterization of these devices for low temperature quantum fluids experiments.