Topological Insulator Thin Films Starting from the Amorphous Phase - BiSe as Example
We present a new method to obtain topological insulator BiSe thin films with a centimeter large lateral length. To produce amorphous BiSe thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral BiSe crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures K and fields T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.