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T. Hoshi

T. Hoshi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2012arXiv

An order-N electronic structure theory with generalized eigenvalue equations and its application to a ten-million-atom system

A linear-algebraic theory called 'multiple Arnoldi method' is presented and realizes large-scale (order-N) electronic structure calculation with generalized eigen-value equations. A set of linear equations, in the form of (zS-H) x = b, are solved simultaneously with multiple Krylov subspaces. The method is implemented in a simulation package ELSES (http://www.elses.jp) with tight-binding-form Hamiltonians. A finite-temperature molecular dynamics simulation is carried out for metallic and insulating materials. A calculation with $10^7$ atoms was realized by a workstation. The parallel efficiency is shown upto 1,024 CPU cores.

preprint2011arXiv

Linear Algebra and Charge Self-consistent Tight-binding Method for Large-scale Electronic Structure Calculations

We review our recently developed electronic structure calculation methods used for the dynamics of large-scale solids or liquids with an efficient algorithm for large scale simultaneous linear equations. The electronic structure calculation method is the `atomic superposition and electron delocalization molecular orbitals theory' (ASED), using the Mulliken charge density. Very crucial algorithm is the generalized shifted COCG (conjugate orthogonal conjugate gradient) method based on the Krylov subspace extended to non-orthogonal basis set. The most important techniques for applications are the shifted equation and the seed switching method, which make the computational cost be reduced much. We, then, present some applications to electronic structure calculations with MD simulation. The applications are given to the fracture propagation in nano-scale Si crystals and the proton transfer in water.