Researcher profile

T. Frauenheim

T. Frauenheim contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2021arXiv

Identification of the Nitrogen Interstitial as Origin of the 3.1 eV Photoluminescence Band in Hexagonal Boron Nitride

Nitrogen interstitials (N$_\mathrm{i}$) have the lowest formation energy among intrinsic defects of hexagonal boron nitride (hBN) under n-type and N-rich conditions. Using an optimized hybrid functional, which reproduces the gap and satisfies the generalized Koopmans condition, an N$_\mathrm{i}$ configuration is found which is lower in energy than the ones reported so far. The (0/-) charge transition level is also much deeper, so N$_\mathrm{i}$ acts as a very efficient compensating center in n-type samples. Its calculated photoluminescence (PL) at 3.0 eV agrees well with the position of an N-sensitive band measured at 3.1 eV. It has been also found that the nitrogen vacancy (V$_\mathrm{N}$) cannot be the origin of the three boron electron (TBC) electron paramagnetic resonance (EPR) center and in thermal equilibrium it cannot even exist in n-type samples.

preprint2016arXiv

Many-Body electronic structure calculations of Eu doped ZnO

The formation energies and electronic structure of europium doped zinc oxide has been determined using DFT and many-body $GW$ methods. In the absence of intrisic defects we find that the europium-$f$ states are located in the ZnO band gap with europium possessing a formal charge of 2+. On the other hand, the presence of intrinsic defects in ZnO allows intraband $f-f$ transitions otherwise forbidden in atomic europium. This result coorroborates with recently observed photoluminescence in the visible red region [1].

preprint2014arXiv

Quantum spin Hall states in graphene interacting with WS$_2$ or WSe$_2$

In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence of a magnetic field.

preprint2013arXiv

Extensions of the time-dependent density functional based tight-binding approach

The time-dependent density functional based tight-binding (TD-DFTB) approach is generalized to account for fractional occupations. In addition, an on-site correction leads to marked qualitative and quantitative improvements over the original method. Especially, the known failure of TD-DFTB for the description of σ-> π* and n -> π* excitations is overcome. Benchmark calculations on a large set of organic molecules also indicate a better description of triplet states. The accuracy of the revised TD-DFTB method is found to be similar to first principles TD-DFT calculations at a highly reduced computational cost. As a side issue, we also discuss the generalization of the TD-DFTB method to spin-polarized systems. In contrast to an earlier study [Trani et al., JCTC 7 3304 (2011)], we obtain a formalism that is fully consistent with the use of local exchange-correlation functionals in the ground state DFTB method.

preprint2012arXiv

Controllable magnetic doping of the surface state of a topological insulator

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by thermally-activated diffusion. Angle-resolved photoemission spectroscopy in combination with ab-initio calculations suggest that the doping behavior changes from electron donation for the Fe adatom to neutral or electron acceptance for Fe incorporated into substitutional Bi sites. According to first principles calculations within density functional theory, these Fe substitutional impurities retain a large magnetic moment thus presenting an alternative scheme for magnetically doping the topological surface state. For both types of Fe doping, we see no indication of a gap at the Dirac point.