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T. Claeson

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cond-mat cond-mat.mes-hall cond-mat.supr-con

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preprint1999arXiv

Pseudo-gap features of intrinsic tunneling in (HgBr_2)-Bi2212 single crystals

The c-axis tunneling properties of both pristine Bi2212 and its HgBr$_2$ intercalate have been measured in the temperature range 4.2 - 250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the $\it c$-axis direction have been observed. The dynamic conductance d$I/$d$V(V)$ shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the {\it c}-axis resistance does not change after the intercalation suggesting that a coupling between $\rm CuO_2$-bilayers has little effect on the pseudogap.

preprint1998arXiv

Gain Dependence of the Noise in the Single Electron Transistor

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum charge noise of qn = 9*10^-6 e/sqrt(Hz) in the superconducting state and qn = 9*10^-6 e/sqrt(Hz) in the normal state at a frequency of 4.4 kHz.

preprint1994arXiv

Correlated local distortions of the TlO layers in Tl$_2$Ba$_2$CuO$_{y}$: An x-ray absorption study

We have used the XAFS (x-ray-absorption fine structure) technique to investigate the local structure about the Cu, Ba, and Tl atoms in orthorhombic Tl-2201 with a superconducting transition temperature T$_c$=60 K. Our results clearly show that the O(1), O(2), Cu, and Ba atoms are at their ideal sites as given by the diffraction measurements, while the Tl and O(3) atoms are more disordered than suggested by the average crystal structure. The Tl-Tl distance at 3.5 Å{ } between the TlO layers does not change, but the Tl-Tl distance at 3.9 Å{ } within the TlO layer is not observed and the Tl-Ba and Ba-Tl peaks are very broad. The shorter Tl-O(3) distance in the TlO layer is about 2.33 Å, significantly shorter than the distance calculated with both the Tl and O(3) atoms at their ideal $4e$ sites ( $x=y=$0 or $\frac{1}{2}$). A model based on these results shows that the Tl atom is displaced along the $<110>$ directions from its ideal site by about 0.11 Å; the displacements of neighboring Tl atoms are correlated. The O(3) atom is shifted from the $4e$ site by about 0.53 Å{ } roughly along the $<100>$ directions. A comparison of the Tl L$_{III}$-edge XAFS spectra from three samples, with T$_c$=60 K, 76 K, and 89 K, shows that the O environment around the Tl atom is sensitive to T$_c$ while the Tl local displacement is insensitive to T$_c$ and the structural symmetry. These conclusions are compared with other experimental results and the implications for charge transfer and superconductivity are discussed. This paper has been submitted to Phys. Rev. B.